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    L3 CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    TC4511BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet
    68305-001LF
    		Amphenol Communications Solutions Din Accessory Coding PDF
    65197-001LF
    		Amphenol Communications Solutions Din Accessory Coding Part PDF

    L3 CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LED123

    Abstract: 57411 LED105 LED126 led114 BSEN61000 IEC-348 4 x 7-segment LED display module LED127 led111
    Contextual Info: L+ N - AUX UH N L3 l L3 L2 L1 L1 L2 k l k l L L1 K L2 K L L k L3 K N Voltage Current L1 L2 L3 N L1 L2 L3 1ph 1ph 3W 3ph 3W 3ph 4W 3ph 3W BAL 3ph 4W BAL RS485 option Relay option Unused Voltage terminals are internally connected Secondary of CTs must be connected to earth


    Original     		rs485iec348/bs4753iec688+15bsen60688bs4889bsen61000-6-3bsen61000-6-4bsen601010led12357411led105led126led114bsen61000iec-3484 x 7-segment led display moduleled127led111 PDF

    250945

    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache


    Original     		250945 PDF

    80543KC

    Abstract: 250945 06191
    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.60 GHz with 9MB L3 Cache Intel® Itanium® 2 Processor 1.60 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 6MB L3 Cache Intel® Itanium® 2 Processor 1.50 GHz with 4MB L3 Cache


    Original     		80543kc25094506191 PDF

    SMA MARKING L09

    Abstract: a006 ae02 marking b09 0287 D081 TCO marking a004 TB D83 diode A003 ITP700 Intel Itanium
    Contextual Info: Intel Itanium® 2 Processor Intel® Itanium® 2 Processor 1.66 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.66 GHz with 6 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 9 MB L3 Cache Intel® Itanium® 2 Processor 1.6 GHz with 6 MB L3 Cache


    Original     		sma marking l09a006ae02 markingb09 0287+6d081 tcomarking a004tb d83 diodea003itp700intel itanium PDF

    Contextual Info: Customer Information Sheet DRAWING No.: SHEET R30-300XX02 2 OF 2 | IF IN DOUBT - ASK | | NOT TO SCALE | THIRD ANGLE PROJECTION ALL ORDER DIMENSIONS IN mm CODE: R 3 0 - 300XX02 PART No. LI L2 L3 PART No. LI L2 PART L3 No. LI L2 L3 LENGTH LI IN m m -


    OCR Scan     		r30-300xx02300xx02r30-3000402r30-3003202+2r30-3000602cuzn39pb3 PDF

    250945

    Abstract: intel schematics
    Contextual Info: Intel Itanium® 2 Processor Datasheet Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Intel® Itanium® 2 Processor 1.5 GHz with 6M L3 Cache Processor 1.4 GHz with 4M L3 Cache Processor 1.3 GHz with 3M L3 Cache Processor 1.0 GHz with 3M L3 Cache


    Original     		250945intel schematics PDF

    IF110

    Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2+8smd diode code g6smd diode g6control of starter-generatormarking g3s3 marking diodesmd diode code g3smd diode code g4smd l2 diode PDF

    smd diode g6

    Abstract: marking G3 IF110 GMM3x60-015X1
    Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x1if110id1103x60-015x1+2smd diode g6marking g3 PDF

    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2 PDF

    DIODE marking S6 57

    Contextual Info: MTI 145WX100GD Three phase full Bridge VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW with Trench MOSFETs in DCB-isolated high-current package Part number MTI145WX100GD L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G2 G4 G6 S2 S4 S6 L1- L2- L3+ L3 L3- Features / Advantages:


    Original     		145wx100gdmti145wx100gd20140821adiode marking s6 57 PDF

    DIODE marking S6 57

    Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
    Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x1if110id1103x60-015x1+9diode marking s6 57diode marking s4 57smd diode code s1 96diode marking s6 96smd diode .s6 22smd diode s4 96smd diode g6control of starter-generators4 diode PDF

    Diode smd s6 95

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1diode smd s6 95 PDF

    Contextual Info: GMM 3x100-01X1 VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1 PDF

    Contextual Info: GMM 3x160-0055X2 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055x2 PDF

    DIODE S6 marking code

    Abstract: smd diode g6 Diode smd s6 95 marking G3 3x100-01X1 smd diode code S5
    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1diode s6 marking codesmd diode g6diode smd s6 95+2marking g3smd diode code s5 PDF

    75WX100GD

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x175wx100gd PDF

    50904

    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


    Original     		3x180-004x2id110if11020100713a+150904 PDF

    Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x160-0055x2 PDF

    Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x100-01x1 PDF

    MTI90WX75GD

    Abstract: DIODE marking VU smd diode code g6 vu marking code SMD MARKING DIODE VU
    Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		3x120-0075x2mti90wx75gddiode marking vusmd diode code g6+2vu marking codesmd marking diode vu PDF

    MTI150WX40GD

    Abstract: ID110 SMD MARKING g3
    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions


    Original     		3x180-004x2id110if110lev200+320110307bmti150wx40gdsmd marking g3 PDF

    Contextual Info: GMM 3x120-0075X2 VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings


    Original     		3x120-0075x2 PDF

    SMD mosfet MARKING code TC

    Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
    Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		gmm3x60-015x2if110id1103x60-015x2+9smd mosfet marking code tcsmd diode g6smd marking code s4diode l2 smdsmd diode code g3smd diode code g6smd diode marking code l2control of starter-generatordiode marking s6 57 PDF

    Contextual Info: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions


    Original     		gmm3x60-015x2id110if11020120618a PDF