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    Eaton Corporation CB20110307B7B8

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    Avnet Americas CB20110307B7B8 Bulk 15 Weeks, 4 Days 100
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    Mouser Electronics CB20110307B7B8
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    Eaton Electronics CB20110307B7B8

    Magnum Cb2 Series/ Bulk; |Eaton Electronics CB20110307B7B8
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    Newark CB20110307B7B8 Bulk 100
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    RS CB20110307B7B8 Bulk 16 Weeks 100
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    Eaton Bussmann CB20110307B7B8

    Barrier Terminal Blocks MAGNUM CB2 SERIES
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    Sager CB20110307B7B8 100
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    20110307B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MTI150WX40GD

    Abstract: ID110 SMD MARKING g3
    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions


    Original     		3x180-004x2id110if110lev200+320110307bmti150wx40gdsmd marking g3 PDF

    Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


    Original     		3x180-004x2id110if11020110307b PDF

    Contextual Info: GMM 3x180-004X2 VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol


    Original     		3x180-004x2id110if11020110307b PDF