L282 ST Search Results

P0700CAS6-MWR

Abstract: l282 SUBTRACTION L2822 L-282 SH-4 Hitachi DSA00205
Contextual Info: date: 2002/12/02 HITACHI SEMICONDUCTOR TECHNICAL UPDATE Classification of Production THEME No Development Environment Classification of Information SuperH RISC engine C/C+ Compiler Ver.6 Failure Found in This Release When CPU=SH4 is Specified. Lot No. PRODUCT

l282

Abstract: L-282
Contextual Info: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER C o n t i n u e d DCN REV DESCRIPTION 17288 03 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A A1 NOTES: (UNLES OTHERWISE SPECIFIED; 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS.

2987

Abstract: IDT6198L IDT6198S IDT79R3000 L282
Contextual Info:  IDT6198S IDT6198L CMOS STATIC RAM 64K 16K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

CERAMIC LEADLESS CHIP CARRIER

Abstract: IDT7198L IDT7198S
Contextual Info:  IDT7198S IDT7198L CMOS STATIC RAMs 64K 16K x 4-BIT Added Chip Select and Output Controls Integrated Device Technology, Inc. nized as 16K x 4. It is fabricated using IDT’s high-performance, high-reliability technology—CMOS. This state-of-theart technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.

l282

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT IDT61298SA Integrated Device Techn olog y, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)

SO28-5

Abstract: IDT71256 IDT71256L IDT71256S P28-2 71256S20 L282
Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT with Output Control IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) The IDT7187 is a 65,536-bit high-speed static RAM

7198S

Abstract: 7198L25
Contextual Info: CMOS STATIC RAMs 64 K 16Kx 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integrated Device Technology, Inc. FEATURES: _ nized as 16K x 4. It is fabricated using IDT’s high-perfor­ mance, high-reliability technology— CMOS. This state-of-theart technology, combined with innovative circuit design tech­

64k dynamic RAM

Abstract: datasheet for 64K RAM 22-PIN IDT7187 IDT7187L IDT7187S
Contextual Info: IDT7187S IDT7187L CMOS STATIC RAM 64K 64K x 1-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25ns (max.) • Low power consumption

j32-1

Abstract: idt71256
Contextual Info: integrated 5flE D device 4A25771 CMOS STATIC RAM 256K 32K x 8-BIT D011b7E MM? « I D T IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

vhc o2

Abstract: idt p28-2 IDT61298SA P28-2
Contextual Info: IDT61298SA CMOS STATIC RAM 256K 64K x 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times) — Military: 20/25ns (max.)

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)

Contextual Info: J d t CMOS STATIC RAMs 64K 16KX 4-BIT) IDT7198S IDT7198L Added Chip Select and Output Controls Integrated Devi ce Tech n o logy, Inc. FEATURES: _ • Fast O u tp u t E nable (OE) pin ava ila ble fo r added system flexibility • M ultiple C hip S elects (C S i, C S 2 ) sim plify system design

Contextual Info: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

SC1006

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (O E) pin available for added system flexibility • High speed (equal access and cycle times)

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)

LA 5756

Abstract: MATRA MHS HM* 28 pins SOIC pack j32-1
Contextual Info: T e m ic MATRA MHS_ HM 65756 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT IDT61298SA In te g ra te d D evice T ech n o lo g y , Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)

IDT71258

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation

Contextual Info: CMOS STATIC RAMs 64K 16Kx 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integrated Device Technology, Inc. FEATURES: _ • Fast Output Enable (OE) pin available for added system flexibility _ _ • Multiple Chip Selects (C S i, CS 2 ) simplify system design

L282 ST

Abstract: ci 7482 TS3431 sot23 L282 JESD97 L281 L282 TL431 sot23 L283 ts-341
Contextual Info: Block diagram 1 TS3431 Block diagram Figure 1. Block diagram Cathode Reference + - VREF Anode 2 Absolute maximum ratings Table 1. Absolute maximum ratings AMR Symbol VKA IK IREF Parameter Value Unit 25 V -100 to +150 mA -0.05 to10 mA 360 mW -65 to +150 °C

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCED INFORMATION IDT61298 Integrated Device Technology, Inc. FEATURES: _ DESCRIPTION: The IDT61298 is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT's highperformance, high-reliability technology - CEMOS. This stateof-the-arl technology, combined with innovative circuit design

L282 ST

Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
Contextual Info: TS3431 1.24V PROGRAMMABLE SHUNT VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE 1.24 to 24V ■ SEVERAL PRECISION @ 25°C ±2%, ±1% and ±0.5% ■ SINK CURRENT CAPABILITY 0.4 to 100mA ■ INDUSTRIAL TEMPERATURE RANGE: -40 to +125°C L SOT23-3L Plastic Micropackage