L282 ST Search Results

l282

Abstract: L-282
Contextual Info: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER C o n t i n u e d DCN REV DESCRIPTION 17288 03 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A A1 NOTES: (UNLES OTHERWISE SPECIFIED; 1. ALL DIMENSIONS ARE IN INCHES. 2. BSC - BASIC LEAD SPACING BETWEEN CENTERS.

2987

Abstract: IDT6198L IDT6198S IDT79R3000 L282
Contextual Info:  IDT6198S IDT6198L CMOS STATIC RAM 64K 16K x 4-BIT with Output Control Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

CERAMIC LEADLESS CHIP CARRIER

Abstract: IDT7198L IDT7198S
Contextual Info:  IDT7198S IDT7198L CMOS STATIC RAMs 64K 16K x 4-BIT Added Chip Select and Output Controls Integrated Device Technology, Inc. nized as 16K x 4. It is fabricated using IDT’s high-performance, high-reliability technology—CMOS. This state-of-theart technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.

l282

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT IDT61298SA Integrated Device Techn olog y, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (OE) pin available for added system flexibility • High speed (equal access and cycle times)

Contextual Info: CMOS STATIC RAM 64K 16Kx 4-BIT with Output Control IDT6198S IDT6198L Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added system flexibility

7198S

Abstract: 7198L25
Contextual Info: CMOS STATIC RAMs 64 K 16Kx 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integrated Device Technology, Inc. FEATURES: _ nized as 16K x 4. It is fabricated using IDT’s high-perfor­ mance, high-reliability technology— CMOS. This state-of-theart technology, combined with innovative circuit design tech­

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)

Contextual Info: Tem ic HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

SC1006

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT PRELIMINARY IDT61298SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 high-speed static RAM • Fast Output Enable (O E) pin available for added system flexibility • High speed (equal access and cycle times)

IDT71258

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation

2S35

Abstract: R05F
Contextual Info: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and Outputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • Th e ID T 7 1 2 8 1 /ID T 7 1 282 are 26 2,144-b it high-speed static

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High speed (equal access and cycle time) — Military: 2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 n s (m ax.) — Com mercial: 15/2 0 /2 5 /3 5 n s (m ax.)

L282 ST

Abstract: vk 01 b sot23 L282 ci 7482 TS3431
Contextual Info: TS3431 1.24 V programmable shunt voltage reference Datasheet − production data Features • Adjustable output voltage: 1.24 to 24 V ■ Several precision levels @ 25°C ± 2%, ± 1%, ± 0.5% and ± 0.25% ■ Sink current capability: 0.4 to 100 mA ■ Industrial temperature range: - 40°C to +125°C

28 LEADLESS CHIP CARRIER DWG

Abstract: MS-009-AE
Contextual Info: PACKAGE DIAGRAM OUTLINES LEADLESS CHIP CARRIER DCN REV DESCRIPTION 17 295 05 UPDATE TO STANDARDIZE DRAWING DATE APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN A .060 .075 A1 .050 .065 B1 R9 L 20-1

y732

Abstract: 74FCT821
Contextual Info: IDT54/74FCT821/A/B HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT821A/B HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER FEATURES: DESCRIPTION: • Equivalent to AMD’s Am29821-25 bipolar registers in pinout/

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device T echnology, Inc. FEATURES: DESCRIPTION: • High speed (equal acce ss and cycle tim e) — M ilitary: 20/25/3 5/45 /55/70/8 5ns (m ax.) — C om m ercia l: 15/20/25/35ns (m ax.) • Low po w e r consum ption

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Com mercial: 2 0 /25/3 5/45 n s (max.)

AM29800

Abstract: SO24-2 d794
Contextual Info: IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUFFER IDT54/74FCT827A/B/C FEATURES: DESCRIPTION: − − The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. −

L282 ST

Abstract: ci 7482 sot23 L282 L281 L282-L283 ci 4017 JESD97 L282 TL431 TS3431
Contextual Info: TS3431 1.24V programmable shunt voltage reference Features • Adjustable output voltage: 1.24 to 24V ■ Several precision levels @ 25°C ±2%, ±1%, ±0.5% and ±0.25% ■ Sink current capability: 0.4 to 100mA ■ Industrial temperature range: -40°C to +125°C

74FCT821

Contextual Info: IDT54/74FCT821A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER IDT54/74FCT821A/B/C FEATURES: DESCRIPTION: − The FCT821 series is built using an advanced dual metal CMOS

Am29821-25

Contextual Info: IDT54/74FCT821A/B/C HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUS INTERFACE REGISTER IDT54/74FCT821A/B/C FEATURES: DESCRIPTION: − The FCT821 series is built using an advanced dual metal CMOS

Contextual Info: CMOS STATIC RAMs 64K 16K x 4-BIT IDT7198S IDT7198L Added Chip Select and Output Controls Integ rated Device T echnology, Inc. FEATURES: _ m ance, h ig h -re lia bility tech nolog y— C M O S . T his state-of-theart technology, com bined w ith innovative circuit design te c h ­

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative circuit design techniques, provides a cost effective alternative to bipolar and fast N M O S memories. Timing param eters have been speci­

2S5570

Contextual Info: CMOS STATIC RAMs 64K 16Kx 4-BIT IDT71981S/L IDT71982S/L Separate Data Inputs and Outputs Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • Access times as fast as 15ns are available. These circuits also offer a reduced power standby mode (Isb). When CSi or