L271 Search Results

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

L271

Abstract: L2711
Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

L2711

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

BS6500

Abstract: L2711 UL62
Contextual Info: LAST UPDATED: March 12, 2001 L2703B CORDSET - 13A PLUG WITH CEE 22 RIGHT ANGLE CONNECTOR This unit has the same format as L2711 but incorporates a shielded screened mains cord which will reject radiated interference. Typical users are on computer terminals or other

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

L271

Abstract: 01UF 100OHM 180PF 33PF L2711 LP721
Contextual Info: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

L271

Abstract: k 2213
Contextual Info: 7 ci cI D7 41 DDDlS2a 222 « S A K J T-1 Surface Illumination Type SEL 2013 Series SANKEN SEL 2213 C SEL 2413 E S E L271 3K SAN KEN LIG HT E M IT T IN G DIO DES SEL 2813 A S E L29 1 3 K FEATURES • M ounting Requires O nly a Small S p ace •W id e View ing A n g le /S u rfa c e Light Emission

L271

Abstract: L2711 3393
Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

L271

Abstract: 8A125 Brad Harrison tl271
Contextual Info: MCRO SWITCH CATALOG FED. MF9• CODE BZE6-2RN-FR SWITCH - ENCLOSED a Honeywell Division L IS T IN G 9192B ctr Li_ I Z Ù1 CM I CD LjJ N ÛÛ 3: A 4X SEAL RING 2X 6-32 UNC HEX NUT/T\ 2X 6-32 UNC X 1.500 ROUND HEAD MACHINE SCREW /T\ ELASTOMER PLUNGER SEALSECURED TO COMPONENTS

ma 5558

Abstract: L276
Contextual Info: TS431 Low voltage adjustable shunt reference Datasheet − production data Features Z TO92 Plastic package • Low voltage operation: 1.24 to 6 V ■ 2 %, 1 % and 0.5 % voltage precision ■ Wide operating range cathode current: 60 µA to 30 mA ■ Low output impedance: 0.2 Ω

L271

Abstract: SO23-5
Contextual Info: TS431  LOW VOLTAGE ADJUSTABLE SHUNT REFERENCE . . . . . LOW VOLTAGE OPERATION : 1.24 TO 6V 2% and 1% VOLTAGE PRECISION WIDE RANGE CATHODE CURRENT : 25µA TO 30mA LOW OUTPUT IMPEDANCE : 0.25W HIGH STABILITY WHILE OPERATING WITH CAPACITIVE LOAD ESD PROTECTION :

IT8511TE

Abstract: asus C5915 IT8511 C3923 J6801 c7319 R5707 T8-232 T2448
Contextual Info: 5 01 D C B A 4 Block Diagram 61 02 System Setting 62 USB CONN 03 * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2)

realtek alc660

Abstract: ALC660 F3J INVERTER CABLE asus RM04F M64-M ATI M64-M pt5737 QG82945PM MAC522
Contextual Info: 5 A * 02 System Setting 62 USB CONN 03 * 63 * 04 CPU-YONAH HOST 64 ISA ROM 05 CPU-YONAH(PWR) 65 * 06 * 66 LED 07 NB-945PM(HOST) 67 * 08 NB-945PM(DMI & CFG) 68 DC & BAT IN 09 NB-945PM(GRAPHIC) 69 * 10 NB-945PM(DDR2) 70 Debug CONN. 11 NB-945PM(PWR) 71 * 12

IT8511TE

Abstract: asus 6C720 AC_IN_OC 498C0 IT8511 R5538 ALC660 U5403 ICS9LPR363AGLFT
Contextual Info: 5 01 D B A 61 02 System Setting 62 USB CONN * 63 * 04 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM 06 * 66 LED 07 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN.

L274 marking code

Abstract: h1 sot23-5 L272 Circuit q001 sot23-5 L272 JESD97 L272 L274 L276 TL1431
Contextual Info: TS431 Low voltage adjustable shunt reference Features • Low voltage operation: 1.24 to 6V ■ 2%, 1% and 0.5% voltage precision ■ Wide operating range cathode current: 60µA to 30mA ■ Low output impedance: 0.2Ω ■ Typically stable for any capacitive loads

AL437

Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

M5L27256K

Contextual Info: M IT S U B IS H I M ICRO CO M PUTERS M 50957-PG YS PIGGYBACK fo r M 5 0 9 5 7 -X X X S P ,M 5 0 9 5 8 -X X X S P ,M 5 0 9 5 9 -X X X S P FEATURES DESCRIPTION The M 50957-PGYS is an EPROM • mounted-type micro­ Differences with the M 50957-XXXSP are: computer employing C M O S technology, and is designed for

L271

Abstract: L-271 L2710B
Contextual Info: IEC/CEE22 Appliance Connectors B enm gLee M O ULD ED LEADS Type Part Number PO W ER CONNECTOR WITH CABLE RT A N G L E PO W ER CO NNECTO R WITH CABLE REVERSE RT A N G L E CONNECTOR PO W ER CONNECTOR WITH SH IE LD E D CABLE RT A N G LE CO NNECTO R WITH SH IE LD E D

L130C

Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

TB218

Contextual Info: TB218 Freq:30-162Mhz, Vds=7.2Vdc, Idq=800mA TB218 Gain/Efficiency vs Frequency: Vds=7.2Vdc, Idq=800mA 50 50 45 45 40 40 35 35 Efficiency 30 Pout fixed at 3W Gain 25 25 20 20 15 15 10 10 5 5 20 30 40 50 60 70 80 90 100 110 Frequency MHz 120 130 140 150 160

3 volt regulator

Abstract: G261 G261P1U G261P3U sop16 package 033 regulator
Contextual Info: G261 Global Mixed-mode Technology Inc. Low Voltage Differential LVD SCSI 27 Line Regulator Set Features Description SCSI SPI-2 (Ultra 2), SPI-3 (Ultra 3/Ultra 160) and SPI-4 (Ultra 320) LVD SCSI, 27 Line Low Voltage Differential Regulator „ 4V to 5.25V Operation