L2 SOT Search Results

sy10s897jc

Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Contextual Info: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2

ATML

Abstract: ATML U 0420g MIC5205M5 ATML H Unisem 0116E ATML 28 SPN860003 MIC2211
Contextual Info: High Temp Bias Moisture Life Test TA = 85C / 85%RH at rated voltage or Highly Accelerated Stress Test HAST +131C / 85%RH MSL Pkg Lds Device D/C Process L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 6 6 6 10 10 10 10

MURATA GRM15 -V2

Contextual Info: AN11086 BGU7003 LNA application for GPS L2 band Rev. 2 — 9 October 2012 Application note Document information Info Content Keywords BGU7003, LNA, GPS L2 band. Abstract This application note provides circuit simulation, schematic, layout, BOM and typical EVB performance for GPS L2 LNA based on BGU7003.

Contextual Info: AN11353 BGU8009/BGU7005 L2 and L5 Band LNA Application Rev. 1 — 27 May 2013 Application Note Document information Info Content Keywords LNA, L2 GPS Band, L5 GPS Band, GNSS, BGU8009, BGU7005 Abstract This document describes the application of the BGU8009 and BGU7005

Contextual Info: Package outline CQFP240; ceramic quad flat package; 240 leads; body 32 x 32 x 2.92 mm SOT779-1 L L1 L2 D b e 61 120 60 121 e E L2 L1 L b 1 180 240 181 X 10 A2 20 mm A1 A3 A J scale detail X DIMENSIONS mm dimensions are derived from original inch dimensions

Contextual Info: Package outline Plastic single-ended leaded through hole package; 3 leads (on-circle) SOT54 variant c e1 L2 E d A L b 1 e1 2 e D 3 b1 L1 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48

cqfp240

Abstract: CQFP24 sot779 EL-1L2
Contextual Info: PDF: 2002 Oct 31 Philips Semiconductors Package outline CQFP240; ceramic quad flat package; 240 leads; body 32 x 32 x 2.92 mm SOT779-1 L L1 L2 D b e 61 120 60 121 e E L2 L1 L b 1 180 240 181 X 10 A2 20 mm A1 A3 A J scale detail X DIMENSIONS mm dimensions are derived from original inch dimensions

Contextual Info: Package outline Plastic single-ended package; 5-lead low-profile TO-220 SOT281 A A1 E D1 mounting base D L1 L3 Q L2 m L 1 5 e b c w M 5 10 mm scale DIMENSIONS mm are the original dimensions (3) UNIT A A1 b c D D1 E e L L1(1) L2(2) L3 max. m Q w mm 4.5 4.1

TO253

Abstract: transistor k 790 PLCC-20
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

TO253

Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

AAFA1

Contextual Info: Package Information Siliconix CERAMIC DIP: 8, 14, AND 16 LEADS E1 E 1 2 A1 D S A L1 L L2 b C b1 Q e1 e DIM MILLIMETERS MIN MAX INCHES MIN MAX A A1 b b1 C D–8 D–14 D–16 E E1 e e1 L L1 L2 S–8 S–14 S–16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20

medium power switching transistors

Abstract: bss69r
Contextual Info: PART OBSOLETE SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT

philips 555

Abstract: sot596
Contextual Info: PDF: 2000 Oct 03 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 8 terminations SOT596A Package under development e 8x ZD 1 2 3 ZE Philips Semiconductors reserves the right to make changes without notice. e (8×) l2

MMBT3904

Abstract: MMBT4124 TRANSISTOR 636
Contextual Info: ¡SAM SUNG SEM ICO NDUCTOR . INC MMBT4124 14E D | ?*1b4:t<l2 O O O T a tt. 7 | NPN EPITAXIAL SILICON TRANSISTOR .Tj-aR-fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

SST511

Abstract: SST506 SST5114 Diode SOT-23 marking L5 SST502 SST503 SST504 SST505 SST507 SST508
Contextual Info: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7

SST502

Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
Contextual Info: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7

Contextual Info: BSS69 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS R Q Q 7 ÌÌ ISSU E 2 - SEPTEM BER 1995 Q PARTMARKING DETAILS — BSS69 BSS70 BSS69RBSS70R- L2 L3 L6 L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V V CBO

Offline Buck Converter with Tapped Inductor Offers Improved Performance

Abstract: AND8226 AND8318 tapped inductor high voltage buck converter DN06002 Choke Coil Winding buck freewheeling diode 5A offline switchmode -flyback 1N4007 MUR160
Contextual Info: AND8318/D Offline Buck Converter with Tapped Inductor Offers Improved Performance Prepared by: Frank Cathell http://onsemi.com APPLICATION NOTE Introduction pulse width modulation in U1. Freewheeling diode D5 provides for current continuity in L2 when the MOSFET in

Capacitor 0.01 uF

Contextual Info: MAALSS0024 Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • V 1.00 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 Description L2 GND VDD C4

capacitor 0.01 uF

Abstract: M513 MAALSS0024 MAALSS0024SMB-01 MAALSS0024SMB-02 MAALSS0024TR L2 sot26
Contextual Info: Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • MAALSS0024 V2 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 L2 Description GND VDD C4 RFOUT

9852H

Abstract: A2x smd CSB503F58 avr vr3
Contextual Info: Philips Semiconductors Preliminary specification l2C-bus controlled BTSC stereo/SAP decoder and audio processor_ TDA9852 FEATURES • Quasi alignment-free application due to automatic adjustment of channel separation via l2 C-bus • High integration level with automatically tuned

to-218 SOT-93

Contextual Info: STMicroelectronics TO-218 SOT-93 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2

toy car transfer 49 MHZ

Abstract: reverberation IC SAA7740H transmitter receiver car toy ic 747 cn digital graphic equalizer ic dram DC current definition program audio delay line reverberation lc
Contextual Info: Philips Semiconductors Preliminary specification Digital audio processing IC DAPIC SAA7740H FEATURES Hardware • Two digital inputs and two digital outputs in the l2 S-bus format (i.e. 4 audio channels) • Independent input/output interfaces • Slave input/output interfaces