L2 DIODE Search Results

Contextual Info: SKM 400GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * JK L2 C2 $R * I]K L2 $ ,5& * JKL2@ <'/&55 .- &%785& 59&(8=8&E AOO 1 KOO D $( * ^O L2 X^O D ^OO D ` JO 1 $R * IKO L2 A U5 $( * JK L2 NKO D $( * ^O L2 XJO D ^OO D KOO D $:R M NO PPP QI]K

l2c48

Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

diode t 5d

Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions

Diode smd s6 95

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •

Contextual Info: Intel Ethernet Switch FM4000 24-Port 10G Ethernet L2/L3/L4 Switch/Router Datasheet April 7, 2011 Revision: 2.4 Intel® Ethernet Switch FM4000 24-Port 10G Ethernet L2/L3/L4 Switch/Router Table of Contents 1. Introduction . 13

intel 775 motherboard diagram

Abstract: socket AM2 pinout intel pentium 4 motherboard schematic diagram 775 MOTHERBOARD CIRCUIT diagram IOx32 243565 T48 regulator Socket am2 Processor Functional Data Sheet schematic diagram of TV memory writer intel 810 MOTHERBOARD pcb CIRCUIT diagram
Contextual Info: Pentium III Processor with 512KB L2 Cache at 1.13GHz to 1.26GHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available at 1.13 GHz and 1.26GHz 512KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error Correcting Code (ECC)

8086 microprocessor kit manual

Abstract: ATC 25V 0603 CAPACITOR AP-589 CK-408 PGA370 64 pin zif connector
Contextual Info: Intel Pentium® III Processor with 512KB L2 Cache at 1.13GHz to 1.40GHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available at 1.13, 1.26 and 1.40GHz 512KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error Correcting Code (ECC)

intel pentium 3 motherboard schematic diagram

Abstract: 243565 intel 775 motherboard diagram motherboard agtl layout manual components motherboard PCB diagram PGA370 socket socket AM2 pinout PGA370 pinout
Contextual Info: Intel Pentium® III Processor with 512KB L2 Cache at 1.13GHz to 1.40GHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ Available at 1.13, 1.26 and 1.40GHz 512KB Advanced Transfer Cache on-die, full speed Level 2 (L2 cache with Error Correcting Code (ECC)

cop interface

Abstract: PC745 PC755M8 PLL VCO MIL-PRF-38535 X755M
Contextual Info: Features • • • • • • PC755M8 RISC Miprocessor Dedicated 1-megabyte SSRAM L2 Cache, Configured as 128K x 72 21 mm x 25 mm, 255 Ceramic Ball Grid Array CBGA Maximum Core Frequency = 350 MHz Maximum L2 Cache Frequency = 175 MHz Maximum 60x Bus Frequency = 66 MHz

TMS 320 C 6X processor

Abstract: 2164A PC745 PC755M8 2164A dynamic ram cop interface l2-dp
Contextual Info: Features • • • • • • PC755M8 RISC Miprocessor Dedicated 1-megabyte SSRAM L2 Cache, Configured as 128K x 72 21 mm x 25 mm, 255 Ceramic Ball Grid Array CBGA Maximum Core Frequency = 300 MHz Maximum L2 Cache Frequency = 150 MHz Maximum 60x Bus Frequency = 66 MHz

SL868

Abstract: SL869 SL89N sl7ep sl7eg SL86G FCBGA 956 pin 06D6H Marking code X42 A110
Contextual Info: Intel Pentium® M Processor on 90 nm Process with 2-MB L2 Cache and Intel® Processor A100 and A110 on 90 nm process with 512-KB L2 Cache Specification Update August 2008 Revision 027 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR

BFS36

Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

BS9365

Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

2SK3205

Abstract: Transistor EAR - 3
Contextual Info: TOSHIBA 2SK3205 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK3205 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS, DC-DC CONVERTER AND INDUSTRIAL APPLICATIONS Unit in mm MOTOR DRIVE APPLICATIONS

2SK1717

Abstract: toshiba diode 3D
Contextual Info: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSHIBA FIELD EFFECT TRANSISTOR 2SK 1717 SILICON N CHANNEL MOS TYPE L2—7T—MOS IV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS

GEZ DIODE

Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM64PE32T/D SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 256K Pipelined BurstRAM Secondary Cache Module for Pentium MCM64PE32T The MCM64PE32T is designed to provide a burstable, high performance, L2

CSM160

Contextual Info: CSM160, CSM160/L2 Four Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem­ perature range of -55°C to +125°C e.g. military applications .

Contextual Info: CSM161, CSM161/L2 Four Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem­ perature range of -55°C to +125°C e.g. military applications .

2SK2964

Abstract: k2964
Contextual Info: TOSHIBA 2SK2964 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSVI 2SK2964 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX. 4.6MAX.

LT1034

Abstract: 385b12 4953 diode 107 10K 521 LM385-1 385B1 LM385H
Contextual Info: LM 185-1.2/LM 385-L2 TECHNOLOGY •»Micropower Voltage Reference F€ATUR€S DCSCRIPTIOn • ■ ■ ■ Th e L M 1 8 5 -1 .2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper­