L TO KU BAND AMPLIFIERS Search Results

MGF4919G

Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically

low noise hemt transistor

Abstract: MGF4714CP InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a

TGS 822

Contextual Info: < 8$+5 &#6# 27/2 9+6* +06' 4#6'& # ' 241&7%6 52'%+(+%#6+10 25/1& <K.1) 914.&9+&' *'#&37#46'45  ' *#/+.610 #8'07' %#/2$'. %#  6'.'2*10'  (#:  +06'40'6 *662999<+.1)%1/ 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.

Contextual Info: TC4711 PRELIMINARY INFORMATION Ku B A N D P O W E R F E T G a A s F I E L D E F F E C T T R A N S I S T O R FEATURE S 21 dBm output power at 1dB gain compression High associated gain : 8dB @14.5GHz Low source inductance High power added efficiency : 25% @14.5GHz

LA6462D

Abstract: 2064C 2064B LA6462S 3032B-M8IC
Contextual Info: O f dering number : EN 2064C NO.2064B LA6462D.6462S.6462M Monolithic Linear IC SAXYO High-Performance Dual Operational Amplifiers i X "X . The LA6462D,S,M consist of two lndepedent, internally p y i ^ c o m p e V f ^ t e d operational amplifiers. They feature low noise, high speed, wide band. Appli­

Contextual Info: OPERATIONAL AMPLIFIERS W9Ê OPA62Q Or, Call Customer Service al 1-8S0-548-6132 USA Only Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • LOW NOISE 8-PIN DIP, SOIC PACKAGES AND DIE

n-channel 4336

Abstract: mitsubishi microwave MGF2445A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it, m illim e te rs The MGF2445A , power GaAs FET with an N-channel schottky gate , is designed for use in S to Ku band ampli­ fiers. FEATURES • High output power

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

MGF2445A

Abstract: Scans-0065801 n-channel 4336
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs The M G F2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pli­ fiers. 2 - 01.6 FEATURES

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z

Contextual Info: Aerospace and Defense Solutions Aerospace and Defense Solutions Table of Contents Aerospace and Defense Product Overview . . . . . . . . 3 Certifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 High Reliability Screening Capabilities . . . . . . . . . . . . 5

Contextual Info: PRELIMINARY INFORMATION EC4711 W I D E B A N D P OWE R FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • 21 dBm output power at 1dB gain compression High associated gain : 8dB @ 18GH z Broad bandwidth capability Low thermal resistance

ku 602 vc

Abstract: Q02u OPA620KP LM 858 IC chip
Contextual Info: For Im m ettiti M i m i , Coniasi Your Locai Salesperson B U R R -B R O W N OPA62Q W M M M AVAILABLE IN DIE Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW NOISE: 2.3nV/VHz HIGH OUTPUT CURRENT: 100mA

SC9100-007

Abstract: GMV9823-000 ATN3584-02 DMK2308 AA038P5-00
Contextual Info: Millimeterwave 1C and Discrete Semiconductor Products Selection Guide EBAlpha Low Noise Am plifiers Die Size mm Noise Figure (dB) Gain (dB) Pi dB (dBm) Bias (V) Ids (mA) Part Number Page Number 20-24 1.25X2.35 2.5 22.0 8.0 +4.5 (Self) 24 AA022N1-00 1-2 24-30

OPA620

Abstract: OPA620KP OPA620KU OPA620LG OPA620SG
Contextual Info: OPA620 Wideband Precision OPERATIONAL AMPLIFIER FEATURES ● ● ● ● ● ● APPLICATIONS LOW NOISE: 2.3nV/√Hz HIGH OUTPUT CURRENT: 100mA FAST SETTLING: 25ns 0.01% GAIN-BANDWIDTH: 200MHz UNITY-GAIN STABLE LOW OFFSET VOLTAGE: ±100µV ● LOW DIFFERENTIAL GAIN/PHASE ERROR

OPA621KG

Abstract: OPA621KP OPA621KU OPA621LG OPA621SG OPA621 p channel de mosfet
Contextual Info: OPA621 Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 2.3nV/√Hz ● LOW DIFFERENTIAL GAIN/PHASE ERROR ● HIGH OUTPUT CURRENT: 150mA ● LOW NOISE PREAMPLIFIER ● ● ● ● ● ● ● LOW NOISE DIFFERENTIAL AMPLIFIER

Diodes

Abstract: RF Diode Design Guide
Contextual Info: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,

GD-32

Abstract: mgf4941al fet K 727
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

Contextual Info: b S 4 T Û 2 cî 0017054 131 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1423B SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -channel S cho ttky ga te, is designed fo r use in S to Ku band am pli­ fiers. FEATURES

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

DCS-1800

Abstract: GSM-900 MC33170 MC33170DTB MC33170DTBR2 MRFIC0919 MRFIC1819 MTSF3N02HD dcs response time DCS 1800 to GSM converter
Contextual Info: MC33170 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the

2n6439

Abstract: UT25 VK200 Ferox
Contextual Info: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

Contextual Info: PQtm GEC P L E S S E Y ADVANCE INFORMATION DS3627 • 1.3 SL3145 1,6GHz NPN TRANSISTOR ARRAYS The SL3145 is a monolithic array of five high frequency low current NPN transistors. The SL3145 consists of 3 isolated transistors and a differential pair in a 14 lead SO package The

DBC3

Abstract: IB 6401 OPA620KP
Contextual Info: OPA 620 OPA620 OPA 620 OPA 620 Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 2.3nV/√Hz ● LOW NOISE PREAMPLIFIER ● HIGH OUTPUT CURRENT: 100mA ● FAST SETTLING: 25ns 0.01% ● GAIN-BANDWIDTH PRODUCT: 200MHz ● LOW NOISE DIFFERENTIAL AMPLIFIER