L TO KU BAND AMPLIFIERS Search Results

Contextual Info: Compact Ku-Band Hub-mount SSPB 20W to 80W SSPB-S2100KTM series Features •            Converts L-Band to Ku-Band see table A Integrated amplifier with an output power of 20W to 80W (see table A) Phase-locked oscillator to external 10MHz reference

MGF4919G

Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically

MGF4919

Abstract: MGF4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The

GM 2310 A

Abstract: low noise hemt transistor MGF4714CP L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:m illim eters Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a

low noise hemt transistor

Abstract: MGF4714CP InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a

c 1181 H

Abstract: lD-10mA
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION T he M GF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:millimeters Mobility T ransistor) is designed for use in L to Ku band amplifiers. T he plastic mold package offer high cost performance, and has a

NE76038

Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES MF7ftn NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz L g = 0 .3 im , W g = 2 8 0 |xm CO LOW COST PLASTIC PACKAGING

NE76038

Abstract: NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING

MGF1323

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.

30374

Abstract: NE76038 NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE

NE76038

Contextual Info: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im

Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING

0619

Abstract: g720
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li­ U n it m i l l i m e t e r s i .r ic h e s t

SEMP 690

Contextual Info: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5

M 1661 S

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power

MGFC2430A

Abstract: L to Ku band amplifiers
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The M G FC2400 series GaAs FETs were designed fo r high frequency, m edium and high power GaAs FET with N-channel S chottky barrier gate type. FEATURES • High output power

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power

Contextual Info: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features •          Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors

J306

Abstract: CR303 pe 564.1 busy tone detector Z304 A1 GNC Z301B Ho56 dgkp Z302A
Contextual Info: 241&7%6 52'%+ +%#6+10 < 1 8$+5 &#6# 27/2 +06' 4#6'& #(' 9+6* ('#674'5 &GXKEG &CVC 2WOR #(' 5RGGF /*\ < $KV  ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ +PVGITCVGF Combined data pump and Analog Front-End (AFE) ‡ ‡ Full duplex data modem throughput to 2400 bps

TGS 822

Contextual Info: < 8$+5 &#6# 27/2 9+6* +06' 4#6'& # ' 241&7%6 52'%+(+%#6+10 25/1& <K.1) 914.&9+&' *'#&37#46'45  ' *#/+.610 #8'07' %#/2$'. %#  6'.'2*10'  (#:  +06'40'6 *662999<+.1)%1/ 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.

Contextual Info: m mmm GaAs f e t mmm mmmm mmm* mm immmmm GaAs FET Low Noise Amplifiers ! : mm ms «31 Input Type Frequency MHz NJS8300 3000-3100 NJS8605 5400-5900 : Noise Figure (dB max.) 2 | Gain (dB min.) Volt. (V) Current (mA) Input/Output Connector 15 5 20 SMA 3 20

Contextual Info: TC4711 PRELIMINARY INFORMATION Ku B A N D P O W E R F E T G a A s F I E L D E F F E C T T R A N S I S T O R FEATURE S 21 dBm output power at 1dB gain compression High associated gain : 8dB @14.5GHz Low source inductance High power added efficiency : 25% @14.5GHz

Contextual Info: g V w T g q AMFW SERIES AMPLIFIERS ULTRA LOW NOISE Ku-BAIMD LIMA FEATURES • Noise Temperatures from 6 5 K • W eatherproof Housing • 3-Year Product W arranty OPTIONS • • • • • • • Integrated 1 1 0 /2 2 0 VAC Power Supply Integrated Fault Alarm Outputs

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed