L 9635 Search Results

AUFR024N

Abstract: AUIRFU024N AUIRFR024N AUIRFR024 U024N AN-994 IRFZ24N AUIRFR
Contextual Info: PD - 96355 AUTOMOTIVE GRADE AUIRFR024N AUIRFU024N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 96352 AUTOMOTIVE GRADE AUIRL3705N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 96355 AUTOMOTIVE GRADE AUIRFR024N AUIRFU024N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

AUL3705N

Contextual Info: PD - 96352 AUTOMOTIVE GRADE AUIRL3705N Features l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax

u9024n

Abstract: AUFR9024N AUIRFR9024N AUIRFU9024N AUIRFR9024NTR marking code H1a AUIRFR AUFR902
Contextual Info: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax

Contextual Info: AUTOMOTIVE GRADE PD - 96351 AUIRFR9024N AUIRFU9024N Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax

AUIRFZ44VZS

Abstract: AUFZ44VZS AN-994
Contextual Info: PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

6875A

Contextual Info: PD - 96350 IRF4104GPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ

Contextual Info: PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 96350 IRF4104GPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ

Contextual Info: PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability

6 pulse IGBT single line drawing

Contextual Info: PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability

wg65

Abstract: IRG7IA19U
Contextual Info: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability

Contextual Info: PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features l l l l l Key Parameters Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VCE on and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability

114-18063

Abstract: mass air flow sensor pbt-gf30 pbt-GF15 PBT - GF15 connector AMP PBT gf30 connector tyco pbt gf15 komax kappa 220 komax kappa 220 manual AMP PBT - GF15 3 pin Tyco PA66 GF15
Contextual Info: MQS-Umschlag 08.03.2005 13:43 Uhr Seite 1 Catalog 1307999 Issued 3-05 G L O B A L AU TO M OT I V E D I V I S I O N Micro Quadlok Interconnection System MQS-Umschlag 08.03.2005 13:43 Uhr Seite 2 TYCO ELECTRONICS G L O B A L AU TO M OT I V E D I V I S I O N

2 - M4X10

Abstract: 965915 539663 amj n
Contextual Info: T H I S D R A W I N G I S A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N I T I S S U B J E C T TO CHANGE AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N SH O U L D BE C O N T A C T E D FOR T H E L A T E S T R E V I S I O N

Contextual Info: 22 23 21 19 20 17 18 16 14 15 13 12 1 10 1 DRAWING NUMBER IS10N E ZE1CHH,HUMMER DRAWING ZEICHHUH6 APPROVAL LEVEL SHEET BLATT} IHDEX S E M m ie m s s m E l STRICTLY CONFIDENTIAL o VIEW Y S C A L E 2 :1 SECTION A-A S C A L E 2:1 N M M L K K ^4 _i J J 1.25

oni 120

Abstract: 9635
Contextual Info: CAD DRAU ING - ND MANUAL REVISIONS NDTE: 1. DESIGN AND IN T E R F A C E PER I. D. S. -32. P A LC B BG 22 GREAT H I L L RD. , UN-ESS OTHERWISE SPE C IFIE E , TDLERANCES DNi REV. PER ECN 9635 1 1 /1 8 /0 8 JEN D E S C R I P T IDN DATE APPR, DECIMALSi NAUGATUCK,

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series

M4X10

Contextual Info: THIS DRAWING IS A CONTROLLED DO CU M EN T FOR AMP INCORPORATED. IT IS S U B J E C T TO CH ANG E AND THE C O N T R O L L I N G ENGINEERING O R G A N I Z A T I O N S H O U L D BE C O N T A C T E D EOR THE L A T E S T R E V I S I O N . LOG REVISIONS D I ST A

tyco 1241380-2

Abstract: tyco 108-18716 tyco 114-18386 114-18386 1241375-2 1241379-1 chn 003 963530-1 1718558-1 B2010
Contextual Info: T H I S D R A W IN G IS U N P U B L I S H E D . V ERT RA U LI CH E UNV ERQEF FE NTL ICHTE ZEICHNUNG BY C O P Y R I G HT 200 3 TYCO R E L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLICHUNG L OC ^A TE D W I T H : E S S E N D ZU: 2001 D I ST REV IS IO N S

Contextual Info: 4 T H IS DRAWING I S 3 U NPUBLISH ED, COPYRIGHT R E L E A S E D FDR PUBLICATION BY TYCO EL E C T R O N IC S CORPORATION.A L L RIGHTS R E S E R V E D , D A c B A A SECTION AMP 1 471-9 R E V 31MAR2000 A-A 2 1 LOC DIST DS REVI SI ONS LTR DESCRIPTION DATE DWN

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS 2 , - LOC R E S E R VE D . R E V IS IO N S D IS T 00 C O R P O R A T IO N . D E S C R IP T IO N

Contextual Info: D I E S E Z E I C H N U N G I S T EI N K O N T R O L L I E R T E S D O K U M E N T . MATE D WITH: P A S S E N D ZU: LOC T H I S D RA W IN G IS A C O N T R O L L E D D O C U M E N T . R EVISIO N S D IS T AENDERUNGEN D E S C R IP T IO N B E S C H R E IB U N G