KU BAND RF AMPLIFIERS Search Results

DBP-1617N530

Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Standard Communication Band Amplifiers Ku BAND, HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY

RF remote control 10 MHz 17 Pin

Abstract: RF power amplifier MHz
Contextual Info: BLOCK UPCONVERTERS FOR INTEGRATION IN HIGH POWER AMPLIFIERS Ka-Band Model C-, X-, Ku- and DBS-Band Models FEATURES • 32 dB attenuation control • 10 MHz reference input on RF input or external reference input connector • Analog and RS485 remote control

SFD1001

Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
Contextual Info: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000

SEMP 690

Contextual Info: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5

KU band rf amplifiers

Abstract: mgfk41a4045
Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

35W amplifiers

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

5.5w

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGF2415

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

MGF2415A

Abstract: MGF2430A
Contextual Info: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

MGF2430A

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz

Contextual Info: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features •          Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors

F1375

Abstract: 9137 006 208 MGFK38A3745
Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic