KU 606 Search Results

Thomson-CSF THYRISTOR tk 1204

Abstract: TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601
Contextual Info: three phase half-controlled metal stacks ponts triphasés mixtes métalliques Vr = Types VRRM m 80 A 400 600 1000 400 600 1000 / 400 600 1000 / / / RG 604 RG 606 RG 610 6xP80 6160 110 220 380 TK 1204 TK 1206 TK 1210 KU 1004 KU 1006 KU 1010 6xP80 6160 110 220

FLK017WF

Abstract: fujitsu gaas fet
Contextual Info: FLK017WF - X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G-j^B = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package

MH-34B4B

Abstract: circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC
Contextual Info: VHF/UHF ULTRA-COMPACT DUAL-BAND TRANSCEIVER WITH WIDE BAND COVERAGE OPERATING MANUAL VERTEX STANDARD CO., LTD. 4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, Japan VERTEX STANDARD US Headquarters 10900 Walker Street, Cypress, CA 90630, U.S.A. International Division

NE42484C

Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

ku 606

Abstract: RG604 1506 400-110 RG606 C1000 ku 611 KU 608 C-400
Contextual Info: 1\ three phase métal stocks ponts triphasés métalliques Type* 70 A / / / Tam b / / GD 611 676 C GF 611 676 (C) GJ 611 676 (C) H eatsink Convecteur M ech anical code Code mécanique 110 220 380 RG 604 RG 606 RG 610 6xCB80 546 400 600 1000 110 220 380 KU 1504

fujitsu gaas fet

Abstract: FLM1011-3F
Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

FLM1011-3F

Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W

FLM1011-3F

Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general

16GHZ

Abstract: FLK017WF
Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general

Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general

Band Power GaAs FET

Abstract: Flk017wf ku 606 ku 201
Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general

Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general

FLM1011-3F

Abstract: fujitsu gaas fet
Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 35.0dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

Diodes de redressement

Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A

ku 606

Abstract: SV2004
Contextual Info: rectifier diodes > 100 A diodes de re d re ssem en t^ 100 A Types •o Vr r m ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir m ax ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 1018 1020 1022 1024 1025 R R R R R R 1002, 1004, 1006, 1008,

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

Contextual Info: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."

TA 7698 AP

Contextual Info: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:

KU 612

Abstract: BTW 600 btw 50 200 ts 435 ku 606 KU 608 RP6020 BTW50-1200 TK1804 RG612
Contextual Info: new standard single phase half-controlled metal stacks q nouveaux ponts standards métalliques monophasés mixtes A verage o u tp u t cu rra n t C o u ra n t m oyen de s o rtie Type Tamb BDT BDT BDT BDT BDT BDT 15 200 15 400 15 600 15 800 15 1000 15 1200 C