KU 4W TRANSMITTER Search Results

buc ku

Abstract: NJT5025F NJT5025FH NJT5025H hpa L-band WR-75 ku 4w transmitter NJT5025 New Japan Radio Co
Contextual Info: Ku-band 4W BUC [ Block Upconverter ] MODEL NO. NJT5025H / 25FH <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz

NJT5025F

Abstract: NJT5025 buc ku WR-75 njt-5025
Contextual Info: Ku-band 4W BUC [ Block Upconverter ] MODEL NO. NJT5025 / 25F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz

buc ku

Abstract: ku 4w transmitter HPA Ku WR75 connector "ku band" amplifier NJT5025DF phase detector 10 khz NJT5025D WR-75 microwave radio transmitter
Contextual Info: Ku-band 4W BUC [ Block Upconverter ] With Power Monitor MODEL NO. NJT5025D / 25DF <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz

ku 4w transmitter

Abstract: microwave radio transmitter HPA Ku njt5025 NJT5025F 8510 njt-5025 "ku band" amplifier high power microwave transmitter
Contextual Info: Ku-band Transmitter 4.0W Type MODEL NO. NJT5025 / 25F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz IF Input to Ku Band (14.0 to 14.5 GHz)

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

J600 MOSFET

Abstract: uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MOTOROLA LINEAR HF

Abstract: MRF175LV Nippon capacitors MRF175
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

inductor vk200

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

VK200 20/4B inductor

Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

547 MOSFET

Abstract: unelco 1073 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

MOSFET J220

Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
Contextual Info: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

13,56 MHz RFID antenna

Abstract: "protocol air interface" 709 opto ICS30 pcb antenna 13.56 MHz 817 opto-coupler ic circuit diagram DC-JACK Power Connectors detail SAB-C167CR-LM RM900 long range transmitter block diagram
Contextual Info: SL RM900 I•CODE Long Range Reader Module Hardware Product Specification Revision 1.0 Philips Semiconductors October 1999 I•CODE Long Range Reader SL RM900 Rev. 1.0 October 1999 Table of Contents 1

transistor A1023

Abstract: a1023 high power dummy load 50 ohm 200w Bulk Carbon Film Fixed Resistor 5 Watt RMCA Cermet power wire wound resistor 120 ohms j transmitter tube TWT 35KV ri80-150 5W 6.8 ohm k ceramic resistor
Contextual Info: TOKEN HIGH VOLTAGE RESISTOR Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

Contextual Info: TOKEN HIGH VOLTAGE RESISTOR Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

VK200 INDUCTOR

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

AN8200

Abstract: LC PI FILTER DESIGN AN8104 1000 W CLASS D AUDIO AMPLIFIER
Contextual Info: AND8245/D Design Considerations for ESD/EMI Filters: II Low Pass Filters for Audio Filter Applications http://onsemi.com Prepared by: Ryan Hurley ON Semiconductor Applications Engineer APPLICATION NOTE Background For some time now portable electronic devices that have

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s