KSD 150 FULL SAFE Search Results

Contextual Info: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features „ Low forward voltage drop and leakage current „ Low power loss and High efficiency „ High surge capability „ Dual common cathode rectifier „ Full lead-free Pb component and RoHS compliant device

SDB10100PI

Contextual Info: SDB10100PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features y Low forward voltage drop and leakage current y Low power loss and High efficiency y High surge capability y Dual common cathode rectifier y Full lead-free Pb component and RoHS compliant device

ksd transistor

Contextual Info: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744

Contextual Info: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures  Low L forward d voltage drrop  Low L power loss and Hiigh efficienccy  Low L leakage current  High H surge capability Pin Co onfiguration Pin 1: Cathode

SDB1060P

Abstract: SDB1060PI SDB1060
Contextual Info: S SDB1060P PI Schottky Barrier B Rectiffier DUAL CO OMMON CATHODE SCH HOTTKY RECTIF FIER Fe eatures  Low L forward d voltage drrop and leakage curren nt  Low L power loss and Hiigh efficienccy  High H surge capability 1  Dual D common cathode e rectifier

Contextual Info: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures  Low L forward d voltage drrop  Low L power loss and Hiigh efficienccy  Low L leakage current  High H surge capability Pin Co onfiguration Pin 1: Cathode

Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

marking code NT 4 PIN

Contextual Info: S SDB1060P PI Schottky Barrier B Rectiffier DUAL CO OMMON CATHODE SCH HOTTKY RECTIF FIER Fe eatures  Low L forward d voltage drrop and leakage curren nt  Low L power loss and Hiigh efficienccy  High H surge capability 1  Dual D common cathode e rectifier

4N60D

Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and

ksd 150 full safe

Abstract: K*D1691 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

ksd 150 full safe

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage

coelec

Contextual Info: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB707/708 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector-Base Voltage VcEO 100 V C ollector-E m itter Voltage : KSD 568

Contextual Info: SCT0 01L60 Trriac 60 00V, 1A LOGIC LEVEL L T TRIAC Th his device iss suitable fo or low power AC switch hing application, ph hase controll application n such as fa an speed an nd temperatture mo odulation co ontrol, lighting control and a static sw witching relay.

Contextual Info: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSD 568/569 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcBO -8 0 V C ollector-E m itter V oltage : B707

4N60D

Abstract: GE SC triac 4N60
Contextual Info: SC CT04 4N60D D Trriac 60 00V, 4A STANDA ARD TRIAC 2, 4 4 Th his device iss suitable fo or low power AC switch hing application, 1: T1 ph hase controll application n such as fa an speed an nd temperatture 2, 4: T2 mo odulation co ontrol, lighting control and

ksd 150 full safe

Abstract: KSB1151 ksd 75
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB1098 PNP SILICON DARLINGTON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -22 0 F • C om plem ent to KSD 1589 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcB O S ym bol -1 0 0

ksd 150 full safe

Abstract: KSB1151
Contextual Info: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB1121 PNP EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS • • • • Low C ollector-E m itter Saturation Voltage Large C urrent C apacity and W ide SO A Fast Sw itching Speed C om plem ent to KSD 1621 ABSOLUTE MAXIMUM RATING TA=25°C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage

Contextual Info: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB810 AUDIO FREQUENCY AMPLIFIER TO -92S • C om plem ent to KSD 1020 ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)

KSB1116

Abstract: TRANSISTOR 1616 ac
Contextual Info: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116