KSC50 Search Results

KSC5030F

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5030F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose

KSC5026M

Contextual Info: KSC5026M KSC5026M High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO

KSC5021

Contextual Info: SavantIC Semiconductor Product Specification KSC5021 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

KSC5027

Contextual Info: SavantIC Semiconductor Product Specification KSC5027 Silicon NPN Power Transistors •Wit DESCRIPTION With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

KSC5027

Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
Contextual Info: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3

Contextual Info: KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • HIGH SPEED SW ITC HING • W ID E S O A ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector-B ase Voltage VcBO 1100 V C ollector-E m itter Voltage V CEO 800 V Em itter-Base Voltage

Contextual Info: NPN SILICON TRANSISTOR KSC5030 HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SW ITC HING • W ID E S O A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic VcBO Sym bol 1100 V C ollector- E m itter Voltage VcEO 800 V Em itter- Base Voltage

Contextual Info: NPN SILICON TRANSISTOR KSC5025 HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SW ITC HING • W ID E S O A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic VcBO Sym bol 800 V C ollector- E m itter Voltage VcEO 500 V Em itter- Base Voltage

Contextual Info: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • HIGH SPEED SWITCHING: tF = 0.1ns Typ • W ID ESOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Sym bol 800 V Collector-Emitter Voltage V CEO 500 V Emitter-Base Voltage

Contextual Info: KSC5042 KSC5042 High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF Typ. Wide S.O.A High reliability TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor

Contextual Info: KSC5029 KSC5029 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1100

Contextual Info: KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

TRANSISTOR KSC5027

Abstract: KSC5027 KSC5027OTU *c5027-r
Contextual Info: KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value

Contextual Info: KSC5030F KSC5030F High Voltage and High Reliability • High Speed Switching • Wide SOA TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO

Contextual Info: KSC5054 KSC5054 High Speed High Voltage Switching Industrial Use 1 NPN Epitaxial Silicon Transistor I-PAK 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units

Contextual Info: KSC5027F KSC5027F High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value

Contextual Info: NPN SILICON TRANSISTOR KSC5039 HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic VcBO Sym bol 800 V C ollector-E m itter Voltage VcEO 400 V Em itter-Base Voltage V ebo 7 V C ollecto r C urrent DC

Contextual Info: KSC5024 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SWITCHING • W ID ESOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Sym bol 800 V Collector-Emitter Voltage VcEO 500 V Emitter- Base Voltage

Contextual Info: NPN SILICON TRANSISTOR KSC5020 HIGH VOLTAGE, HIGH QUALITY HIGH SPEED SWITCHING: tF=0.1ns • W ID ESOA ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cB O Sym bol 800 V C ollector-E m itter Voltage V cE O 500 V Em itter-Base Voltage

Contextual Info: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V

KSC50

Contextual Info: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • HIGH SPEED SWITCHING: tF = 0.1^s Typ • WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 800 V Collector-Emitter Voltage V CEO 500 V Emitter-Base Voltage

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5042 HIGH VOLTAGE SWITCHIHG DYNAMIC FOCUS APPLICATION FEATURES • High breakdown Voltage VCEq=900V • Sm all C0B (C ob typ=2.8pF) • W ide S.O .A • High reliability ABSOLUTE MAXIMUM RATINGS Rating Unit

TRANSISTOR C 557 B

Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY T 0-3P H IG H SP EED S W IT C H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Rating Unit VcBO 1100 VcEO 800 V V V A A A W "C °c Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: NPN SILICON TRANSISTOR KSC5025 HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SW ITC H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cB O Sym bol 800 V C ollector- E m itter Voltage V cE O 500 V Em itter- Base Voltage