KP DIOD Search Results

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS KP-1608E HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

kp20a

Abstract: KP100a kp10a kp30a KP100 KP48A kp10 KP80A KP75A KP45A
Contextual Info: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung

Contextual Info: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

KP-1608

Abstract: KP-1608SF4C
Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: KP-1608SF4C Features Description z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS.

Diodes high voltage

Contextual Info: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

Contextual Info: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting

Contextual Info: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

KP-3216SF4C

Abstract: KDA0431 KP-3216F3C
Contextual Info: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

M63836FP

Abstract: 20P2N-A M63836KP
Contextual Info: 三菱半導体〈トランジスタアレイ〉 三菱半導体〈トランジスタアレイ〉 M63836FP/KP M63836FP/KP 8-Unit 500mA Darlington Transistor-Array With Clamp Diode 8-Unit 500mA Darlington Transistor-Array With Clamp Diode 概 要 M63836FP/KPはPNPトランジスタとNPNトランジスタで

M63820KP

Abstract: 3v led 20P2N-A M63820FP
Contextual Info: 三菱半導体〈トランジスタアレイ〉 三菱半導体〈トランジスタアレイ〉 M63820FP/KP M63820FP/KP 8-Unit 500mA Darlington Transistor-Array With Clamp Diode 8-Unit 500mA Darlington Transistor-Array With Clamp Diode 概 要 M63820FP/KPはNPNトランジスタで構成された8回路のク

3v led

Abstract: M63824GP M63824KP
Contextual Info: 三菱半導体〈トランジスタアレイ〉 三菱半導体〈トランジスタアレイ〉 M63824GP/KP M63824GP/KP 7-Unit 500mA Darlington Transistor-Array With Clamp Diode 7-Unit 500mA Darlington Transistor-Array With Clamp Diode 概 要 M63824GP/KPはNPNトランジスタで構成された7回路のク

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

20P2E-A

Abstract: 20P2N-A IN5 diode
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63820FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN

Melcher KP 5000

Abstract: melcher kp 5000 converter 5660-6R schroff power supply 11006 KP Series
Contextual Info: Rugged Environment AC-DC Converters >100 Watt 250 Watt AC-DC Converters with PFC KP Series KP Series Input to output isolation Double output • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt • Input over- and undervoltage lock-out

DIODE BJE

Abstract: 7-channel sinkdriver
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63824GP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays

tle7242

Abstract: solenoid pwm current valve dither TLE7242G solenoid pwm proportional valve Different types of PWM solenoid valve solenoid pwm current valve PWM Solenoid control tle8242 Different types of PWM solenoid TLE7242-G
Contextual Info: Application Note, V2.0, Oct 2009 Setting the P-I Controller Parameters, KP and KI Application Note TLE7242 and TLE8242 Automotive Power TLE7242 KI KP Application Note Abstract 1 Abstract Note: The following information is given as a hint for the implementation of the device only and shall not be

M63816FP

Abstract: 18P4G 20P2N-A M63816KP M63816P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

Seven Transistor Array PNP

Abstract: bje resistor DIODE BJE BJE 80 diode npn darlington array M63832GP M63832KP 4500 microcomputer KP500 7-channel sinkdriver
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63832GP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DESCRIPTION The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP

M63814FP

Abstract: M63814GP M63814KP M63814P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

BJE 80 diode

Abstract: DIODE BJE 80 20P2N-A M63834FP M63834KP DIODE BJE 8-channel PNP darlington array 9 BJE 80
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63834FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY DESCRIPTION The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP

5660-6R

Contextual Info: Cassette Style AC-DC Converters 250 Watt AC-DC Converters with PFC KP Series KP Series Input voltage from 187.255 V AC 1 or 2 isolated outputs up to 56.5 V DC 4 kV AC I/O electric strength test voltage • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt

GP 015 DIODE

Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN