KP DIOD Search Results

Contextual Info: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216F3BT KP-3216SF4C KP-3216SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, POLARITY MARK i 3.2mmx1,6mm SMTLED. 1.1mm THICKNESS, i HIGH POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes.

4-KP20F-2

Abstract: KP-2012F3C MARK 2CR kp 40 12
Contextual Info: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012F3BT KP-2012SF4C KP-2012SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, i 2.0mmx1,2mm SMTLED. 1.1 mm THICKNESS, 0 .1 3 .0 0 5 j POLARITY MARK i HIGH POWER OUTPUT. im

KPA-3010F3C

Abstract: KP-2012F3C
Contextual Info: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λP (nm) Lens Type KP-3216F3C(1206) Po (mW/sr) @20mA Min. Typ. View ing Angle KPA-3010F3C(1104) Dimension 2θ θ1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C GaAs 940 water clear

Contextual Info: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λD P (nm) Lens Type KP-3216F3C(1206) Po Iv (m mW cd/s)r) View ing @3@ 0m2A 0m *5A 0mA Angle Min. Typ. KPA-3010F3C(1104) Dimension 2θ 1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C

KP-1608SF4BT

Abstract: kp 40 12 kp1608f3c
Contextual Info: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608F3BT KP-1608SF4C KP-1608SF4BT Features Package Dimensions i BOTH W A T E R CLEAR LENS A ND BLUE TR A N S P A R E N T LENS AVAILABLE, i 1 .6mmx0.8mm S M T LED. 1.1mm TH IC K N ES S, 0.25 .01 i HIGH PO W ER OUTPUT.

KP-1608EC

Abstract: KP-1608SGC KP-1608YC KDA0081 KP-1608
Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Description Features ! 1.6mmx0.8mm !LOW KP-1608EC SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

KP-2012EC

Abstract: KDA0081 KP-2012 KP-2012SGC KP-2012YC smd diode ED
Contextual Info: 2.0x1.2mm SMD CHIP LED LAMPS KP-2012EC HIGH EFFICIENCY RED KP-2012SGC SUPER BRIGHT GREEN KP-2012YC YELLOW Features Description !2.0mmx1.2mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

KDA0110

Abstract: KP-3216 KP-3216EC KP-3216SGC KP-3216YC led kp 3216 KP-321
Contextual Info: 3.2x1.6mm SMD CHIP LED LAMPS KP-3216EC HIGH EFFICIENCY RED KP-3216SGC SUPER BRIGHT GREEN KP-3216YC YELLOW Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS KP-1608E HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

kp20a

Abstract: KP100a kp10a kp30a KP100 KP48A kp10 KP80A KP75A KP45A
Contextual Info: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung

kp20a

Abstract: KP100a KP10A KP30A KP28A KP24A KP36A KP12A KP15A KP36
Contextual Info: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung

kp20a

Abstract: kp305 KP11 kp33a KP48A
Contextual Info: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung

Contextual Info: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

KP-1608

Abstract: KP-1608SF4C
Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: KP-1608SF4C Features Description z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS.

Contextual Info: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting

Contextual Info: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO Description F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS. zPACKAGE: 2000PCS / REEL.

KDA0429

Abstract: KP-1608F3C KP-1608SF4C
Contextual Info: INFRARED EMITTING DIODES KP-1608F3C KP-1608SF4C Description Features ! WATER CLEAR LENS AVAILABLE. F3 Made with Gallium Arsenide Infrared Emitting ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. diodes. !HIGH POWER OUTPUT. SF4 Made with Gallium Aluminum Arsenide Infrared

Contextual Info: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.

Contextual Info: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

KP-3216SF4C

Abstract: KDA0431 KP-3216F3C
Contextual Info: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.

GP 023 DIODE

Abstract: kp 103 power transistor array M63824GP M63824KP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION

Contextual Info: 1.6x0.8mm INFRA-RED EMITTING DIODE KP-1608SF4C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. W ATER CLEAR LENS. PACKAGE: 2000PCS / REEL .

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

M63816FP

Abstract: M63816KP M63816P 18P4G 20P2N-A
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform