KOREA KLT Search Results

1310nm DFB BH LASER

Abstract: InGaAsP lens TO STM-16 LD SOURCE Aspheric Lens to56 ball Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Contextual Info: 1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-131451S Rev. 006 Description KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131451x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs

STM-16

Abstract: TO56 package Korea KLT TO-56 Kodenshi TO56 TO-56 package laser diode
Contextual Info: C-band InGaAsP strained MQW FP LD TO KLT-4CB413G Description KLT-4CB413G is long wavelength Fabry-Perot AR LD source in TO-56 package with flat window cap. KLT-4CB413G consists of an InGaAsP strained multi-quantum well MQW laser diode and an InGaAs PIN-PD for output monitoring. It at C-band(1529~1559 nm) wavelength band and with data rate of 1.25Gbps.

lens TO

Abstract: 1310nm DFB BH LASER InGaAsP to56 ball laser DFB 1310nm 10mW STM-16 ball lens Aspheric Lens TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Contextual Info: 1310nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-131452x Rev.006 Description KLT-131452x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap. KLT-131452x consists of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs

TO56 package

Abstract: dfb ld 1550 TO56 ball lens cap 2.5G DFB 1550nm TO CAN "TO-56 package" TO can diode 4g Aspheric Lens TO Can TO56 aspherical lens cap
Contextual Info: 1550nm InGaAsP strained MQW DFB-LD KLT-255544x, 2.5G DFB LD TO CAN Description KLT255454x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT255454x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

laser DFB 1550nm 10mW

Abstract: TO56 package STM-16 "TO-56 package" Fabry-Perot 1550 nm to56 ball lens TO
Contextual Info: 1550nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN KLT-155452x Rev.002 Description KLT-155452x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155452x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and an InGaAs

"TO-56 package"

Abstract: dfb 1550nm TO56 package monitor PD 1550nm DFB BH LASER dfb ld 1550 LD SOURCE ball lens to56 ball
Contextual Info: 1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-255444x Description KLT-255444x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-255444x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

TO56 ball lens cap

Abstract: 1310nm DFB BH LASER TO56 aspherical lens cap KLT23 TO can DFB CATV tosa 5mw Aspheric Lens TO Can TO56 package Transmitter Optical Sub Assembly 1310nm FP Laser TOSA
Contextual Info: 1310nm InGaAsP strained MQW DFB-LD KLT231544x, 2.5G DFB LD TO CAN Description KLT-231544x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-231544x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

1550nm led diode

Abstract: Aspheric Lens TOSA Aspheric Lens TO Can Korea KLT "TO-56 package" 10 Gbps TOSA ingaas LED STM-16 coaxial laser diode 1550 nm Aspheric Lens
Contextual Info: 1550nm InGaAsP strained MQW FP-LD KLT-155454x, LD TO can Aspheric lens Description KLT-155454x series are long wavelength Fabry-Perot LD sources in TO-56 package with asp lens cap KLT-155454x series consist of an InGaAsP strained multi-quantum well(MQW) laser diode(LD) and

1550nm DFB BH LASER

Abstract: TOSA DWDM dwdm tosa laser diode to56 KLT-255412x TO-56 package laser diode
Contextual Info: 1550nm InGaAsP strained MQW DFB LD for 1.25G Ø2.0 TO CAN KLT-255412x Description KLT-255442x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with Ø2mm ball lens cap. KLT-255412x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

1310nm DFB BH LASER

Abstract: KLT23 "TO-56 package" tosa 5mw 231444 TO56 package TO56 aspherical lens cap Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Contextual Info: 1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-231444x Description KLT-231444x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-231444x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

lens TO

Abstract: STM-16 tosa 5mw 1550nm 5mw laser diode slope efficiency to56 ball TO56 ball lens cap
Contextual Info: 1550nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN KLT-155451x Rev. 004 Description KLT-155451x series are long wavelength Fabry-Perot LD sources in TO-56 package with ball lens cap KLT-155451x series consist of an InGaAsP strained multi-quantum well MQW laser diode(LD) and

1310nm DFB BH LASER

Abstract: TO56 package TO56 ball lens cap TOSA DWDM "TO-56 package" Transmitter Optical Sub Assembly 1310nm FP Laser TOSA Monitor PD Capacitance 1 pF
Contextual Info: 1310nm InGaAsP strained MQW DFB LD for 1.25G Ø2.0 TO CAN KLT-231412x Description KLT231412x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with Ø2mm ball lens cap. KLT231412x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

1490 DFB 1.25G

Abstract: 1.25G PIN 1490nm "TO-56 package" TO56 package InGaAsP ball lens TOSA DWDM to56 ball tosa 5mw Aspheric Lens
Contextual Info: 1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN KLT-249414x Rev.001 Description KLT-2494414x is long wavelength distributed feedback DFB laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-249414x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output

str g 5551

Abstract: str G 5551 47 D-85540 a1232 R-17778 D-85551 D-12277 str f 6655 Taiwan Oasis Enterprise Co., LTD
Contextual Info: /~ \T P rj= E - ^ / 7 \ /A j U a Sales Offices, Distributors & Representatives May 1999 Altera Regional Offices NORTHERN CALIFORNIA CORPORATE HEADQUARTERS Altera Corporation 101 Innovation Drive San Jose, CA 95134 TEL: (408)544-7000 FAX: (408)544-7755 Altera Corporation

20 kV generator schematic

Contextual Info: iC T SGS-THOMSON [Li greMO(êS ^ 7 # R TH BT200 S TRISIL FOR LINE CARD PROTECTION FEATURES • DUAL BIDIRECTIONAL CROWBAR PROTECTION. ■ PEAK PULSE CURRENT: - |pp = 75 A, 10/1000 |as. . HOLDING CURRENT = 150 m A m in ■ BREAKDOWN VOLTAGE = 200 V min. . BREAKOVER VOLTAGE = 290 V max.

Contextual Info: iC T SGS-THOMSON [LKgTOMD i T H DT5 8 S ^7# R TRISIL FOR SLIC PROTECTION FEATURES > CROWBAR PROTECTION • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT: - Ipp = 75 A, 10/1000 |os. . HOLDING CURRENT = 150 m A m in ■ BREAKDOWN VOLTAGE = 58 V.

LCP15XX

Abstract: diode sg 38
Contextual Info: i C T SGS-THOMSON [M iSSi(greMO(êS LCP150S PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES • DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR. ■ HIGH SURGE CURRENT CAPABILITY - Ipp =50 A, 10/1000 Ias. - Ipp = 60 A, 5/320 |as. - I p p = 150 A, 2/10 us.

KLT20

Abstract: k1648 klt22 KEL32 MC100 HEP64 KLT21 LP17 KEP32 HEP139
Contextual Info: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and

HEL16

Abstract: DEVICE MARKING CODE table onsemi marking marking code onsemi marking code onsemi Diode kel33 on semiconductor traceability marking soic HEL32 HEL12 HEL31 HEL05
Contextual Info: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and

schema rs 232

Abstract: transil T6
Contextual Info: / T T SGS-THOMSON IMlDœ ILi@¥»iD êi ITA6V5B3 / ITA10B3 ITA18B3 / ITA25B3 MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES • HIGH SURGE CAPABILITY TRANSIL ARRAY Ip p = 40 A 8/20|as . UP TO 9 BIDIRECTIONAL TRANSIL FUNCTIONS ■ BREAKDOWN VOLTAGE AND MAXIMUM

Contextual Info: SN54ABT18646, SN74ABT18646 SCAN TEST DEVICES WITH 18-BIT TRANSCEIVERS AND REGISTERS SCBS131-AUGUST 1992-REVISED OCTOBER 1992 • SCOPE Instruction Set - IEEE Standard 1149.1-1990 Required Instructions, Optional INTEST, and P1149.1 A CLAMP and HIGHZ - Parallel Signature Analysis at Inputs With

401C

Abstract: D150 VIA141
Contextual Info: YFLEX YFLEX IB llig W IC L C P 0 M 7K U V - ^ f f l U ^ 7 U + Í/^ b ^ 'J V h ÍE íB M I < Y F L E X > c m w k b * -r v tf-^ v x M ê is i+ ô ^ ^ o G b p s b ^ U O s S IË ^ R lig i£ iiS ) S tt- ü ^ S Æ tÊ ic ffin r u ^ fc * f c ^ f f l A ° ^ - >

SG 62A

Contextual Info: *T # SGS-THOMSON IM 3Ei ILi(§TO M(@l> TPB SERIES TRISIL FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. . HOLDING CURRENT = lH Suffix 1 2= 120m Am in. Suffix 1 8 = 1 80mA min. . PEAK PULSE CURRENT: Ip p = 90 A, 10/1000 |os.

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention