KMM466S424BT Search Results

Contextual Info: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

Contextual Info: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristies of comp, level are changed as below : - Input leakage Currents (Inputs) : + 5uA to + 1uA. Input leakage Currents (I/O) : + 5 u A to + 1.5uA. - Cin to be measured at V DD = 3.3V, TA = 23 °C, f = 1 MHz, V REF = 1 .4V + 200 mV.

Contextual Info: 144pin SDRAM SODIMM KMM466S424BT Revision History Revision .3 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: KMM466S424BT 144pin SDRAM SODIMM KMM466S424BT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424BT Is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KM416S4030BT-F10

Abstract: KM416S4030BT Kmm466S424bt KMM466S424BT-F0
Contextual Info: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .