KMM466S4 Search Results

Contextual Info: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

KMM466S4

Abstract: KMM466S404BT-FL
Contextual Info: Preliminary KMM466S404BT_ 144pin SDRAM SODIMM KMM466S404BT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S404BT is a 4M bit x 64 Synchronous

Contextual Info: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristies of comp, level are changed as below : - Input leakage Currents (Inputs) : + 5uA to + 1uA. Input leakage Currents (I/O) : + 5 u A to + 1.5uA. - Cin to be measured at V DD = 3.3V, TA = 23 °C, f = 1 MHz, V REF = 1 .4V + 200 mV.

Contextual Info: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: 144pin SDRAM SODIMM KMM466S424BT Revision History Revision .3 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.

KMM466S424CT

Abstract: KMM466S424CT-F0
Contextual Info: Preliminary 144pin SDRAM SODIMM KMM466S424CT KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous

37L34

Abstract: KMM466S404AT-F0
Contextual Info: NEW JEDEC SDRAM MODULE KMM466S404AT KMM466S404AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S404AT is a 4M bit x 64 Synchronous - Performance range Max Freq. Speed

Contextual Info: KMM466S424AT NEW JEDEC SDRAM MODULE KMM466S424AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S424BT 144pin SDRAM SODIMM KMM466S424BT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424BT Is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous

KM416S4030BT-F10

Abstract: KM416S4030BT Kmm466S424bt KMM466S424BT-F0
Contextual Info: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

Contextual Info: P r e l i mi n a r y K M M 4 6 6 S 4 0 4 B T _ 144pi n S D R A M S O D I M M K M M 4 6 6 S 4 0 4 B T SD RAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD G E NE R AL DESCRIPTION