KMM466S1 Search Results

Contextual Info: PC66 SODIMM KMM466S1723AT2 KMM466S1723AT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung KM M 466S1723AT2 is a 16M bit x 64 S ynchro­ • Perform ance range nous Dynam ic RAM high density m em ory m odule. The S am ­

Contextual Info: Preliminary KMM466S1723T2_144pin SDRAM SODIMM KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM

Contextual Info: Preliminary 144pirt SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1724T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC66 SODIMM KMM466S1724BT2 Revision History Revsssors 0,0 July 5,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. REV. 2 April '98 aJECTRONCS Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM

KMM466S1723AT3-F0

Abstract: kmm466s1723
Contextual Info: PC66 SODIMM KMM466S1723AT3 Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KMM466S1723AT2

Contextual Info: KMM466S1723AT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KMM466S104BT-F0

Contextual Info: KMM466S104BT NEW JEDEC SDRAM MODULE KMM466S104BT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DR AM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104BT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM466S104CT-F0

Abstract: KM416S1020CT-F10
Contextual Info: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.

KMM466S1724T2-F0

Contextual Info: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (September 1998) - Corrected the Part Number as KMM466S1724T2. REV. 3 Sept. '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2

KMM466S1723T-F0

Contextual Info: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7 REV. 3 August '98 Preliminary

Contextual Info: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 August '98 ELECTROMCS

KMM466S1723T3-F0

Abstract: KMM466S1
Contextual Info: KMM466S1723T3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S1723T3 KMM466S1723T3 SDRAM SODIMM

KMM466S104CT-F0

Abstract: KMM466S104CT-FL
Contextual Info: Preliminary 144pin SDRAM SODIMM KMM466S104CT KM M 466S104CT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DRAM s with SPD FEATURE G ENERAL DESCRIPTION P e rfo rm a n c e ra n g e T h e S a m s u n g K M M 4 6 6 S 1 0 4 C T is a 1 M bit x 6 4 S y n c h ro n o u s

KMM466S1723T-F0

Contextual Info: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 A u gust '98 ELECTROMC8

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM

KMM466S1724T-F0

Contextual Info: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM466S1723T3-F0

Contextual Info: KMM466S1723T3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMC8 This Material Copyrighted By Its Respective Manufacturer Preliminary

Contextual Info: KMM466S1724BT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM KMM466S1723T3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T3 is a 16M bit x 64 Synchro­

Contextual Info: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh curre nt (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 August '98 ELECTRCMCS