KMM466F804BS1 Search Results

KMM466F804BS1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KMM466F804BS1-L-5		Samsung Electronics	8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh	Original	PDF	435.52KB	20
KMM466F804BS1-L-6		Samsung Electronics	8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh	Original	PDF	435.52KB	20

KMM466F804BS1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DRAM MODULE KMM466F804BS1 -L 8Mx64 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KMM466F804BS1 -L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters t Changed the parameter t c a c p (access c a c (access ELECTRONICS	OCR Scan	KMM466F804BS1 8Mx64 4Mx16 KMM466F804BS1-L 4Mx16, 466F804BS1-L 8Mx64bits 4Mx16bits	PDF
Contextual Info: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.	Original	KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil	PDF
Contextual Info: DRAM MODULE KMM466F804BS1-L Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter t CAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS.	Original	KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 150Max 81Max)	PDF
CACP Contextual Info: DRAM M O D U L E K MM 4 6 6 F 8 0 4 B S 1 - L 8Mx64 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 LEETJÍOM5CS DRAM M O D U L E K MM 4 6 6 F 8 0 4 B S 1 - L Re vis ion History Ve r s i o n 0.0 ( Sept , 1 99 7 ) i Removed two AC parameters t , Changed the parameter t	OCR Scan	8Mx64 4Mx16 4Mx16, KMM466F804BS1 8Mx64bits 416V4104BS-L CACP	PDF