KMA2D8P20X Search Results
KMA2D8P20X Datasheets Context Search
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KMA2D8P20X
Abstract: Marking 52 tsop 6 marking A1 6
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KMA2D8P20X KMA2D8P20X Marking 52 tsop 6 marking A1 6 | |
KMA2D8P20XContextual Info: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. D H FEATURES ・VDSS=-20V, ID=-2.8A. J E ・Drain-Source ON Resistance. : RDS ON =90mΩ(Max.) @ VGS=-4.5V |
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KMA2D8P20X KMA2D8P20X | |
Contextual Info: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES 2007. 3. 22 Revision No : 1 1/5 |
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KMA2D8P20X | |
KMA2D8P20XContextual Info: SEMICONDUCTOR KMA2D8P20X TECHNICAL DATA P-CH Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. A F 6 FEATURES C 4 B1 VDSS=-20V, ID=-2.8A. Drain-Source ON Resistance. 1 3 : RDS ON =90m (Max.) @ VGS=-4.5V |
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KMA2D8P20X KMA2D8P20X | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS |