KM644005 Search Results

Contextual Info: ADVANCE INFORMATION KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM644005J-15: 180mA (max.) KM644005J-20: 160mA (max.)

Contextual Info: L.4E » • KM644005 7 ^ 4 1 4 2 DDlHESfi 5T1 «SIICK ADVANCE INFORMATION CMOS SRAM SAMSUNG ELECTRONICS INC 1,048,576 WORD x 4 Bit Separate I/O High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation

Contextual Info: ADVANCE INFORMATION CMOS SRAM K M 644005 1,048,576 WORD X 4 Bit Separate I/O High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM644005J-15: 180mA (max.)

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10