KM641003J Search Results

KM641003J

Contextual Info: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)

KM641003J-15

Abstract: KM641003J-20
Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

bm42

Contextual Info: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : K M 64 100 3-1 5: 1 70mA (Max.)

Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM641003 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003 uses four common input and output lines and has an output enable pin which operates

Contextual Info: KM641003 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10mA(max.) Operating KM641003-15: 170mA(max.) KM641003-17:1 6 0 mA(max.)

KM641003J-15

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ïbMlMS D a i 7 h S 5 TSS ■ ISJ16K PRELIMINARY CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

Contextual Info: SAHSUN6 ELECTRONICS INC b?E D m 7^4142 0017bSS Ì2 5 • SH6K PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)

Contextual Info: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating :KM641003-15:170mA (Max.) KM641003-17: 160mA (Max.)

KM641003-20

Contextual Info: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003-15 : 170mA (Max.) KM641003-17: 160mA (Max.)