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    KM416V4104BS Search Results

    KM416V4104BS Datasheets (10)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    KM416V4104BS
    		Samsung Electronics KM416V4104BS 4M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 4Mx16 Mode = Edo Voltage(V) = 3.3 Refresh = 4K/64ms Speed(ns) = 50,60 Package = 50TSOP2 Power = Normal,low Production Status = Eol Comments = - Original PDF 819.07KB 36
    KM416V4104BS-45
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BS-5
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BS-6
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BS-L-45
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BSL-45
    		Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF 819.08KB 36
    KM416V4104BS-L-5
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BSL-5
    		Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF 819.08KB 36
    KM416V4104BS-L-6
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF 819.07KB 36
    KM416V4104BSL-6
    		Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF 819.08KB 36
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    KM416V4104BS Price and Stock

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    Samsung Semiconductor & Electro-Mechanics KM416V4104BSL6

    DRAM Chip EDO 64Mbit 4Mx16 3.3V 50-Pin TSOP-II
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    Bristol Electronics KM416V4104BSL6 26
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    SEC KM416V4104BS-L6

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    Quest Components KM416V4104BS-L6 76
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    Samsung Electronics Co. Ltd KM416V4104BS-L5

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    Component Electronics, Inc KM416V4104BS-L5 1,046
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    KM416V4104BS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Dec. 1997) • R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404AS1 KMM466F404BS2-L KMM466F404AS2-L 4Mx16, PDF

    KMM372F804BS

    Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin PDF

    KMM372F404BS

    Contextual Info: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		KMM372F404BS KMM372F404BS 4Mx16 KMM372F404B 4Mx72bits KMM372F404B 4Mx16bits 400mil 168-pin PDF

    Contextual Info: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		KMM332F404BS/BZ-L 4Mx32 4Mx16 KMM332F404BS/BZ-L 4MX16, KMM332F404B 8Mx32bits KMM332F404B PDF

    Contextual Info: DRAM MODULE KMM366F40 8 4BS1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM366F40(8)4BS1 Revision History Version 0.0 (Dec. 1997) R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		KMM366F40 4Mx64 4Mx16 4Mx16, PDF

    KMM366F404BS1

    Contextual Info: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original     		KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1 PDF

    4MX16

    Abstract: KM416V4104BS
    Contextual Info: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B KM416V4104BS PDF

    4MX16

    Contextual Info: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM332F404BS/BZ-L 4Mx32 4Mx16 KMM332F404BS/BZ-L 4MX16, KMM332F404B 8Mx32bits KMM332F404B PDF

    24C02N

    Contextual Info: UG44W6446HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788


    Original     		UG44W6446HSG 144Pin UG44W6446HSG 24C02N-10SC-2 144-pin 24C02N PDF

    Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin PDF

    Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.1 Nov. 1997 Rev.0.1 (Nov. 1997) ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Sept. 1997) • R e m o v e d tw o AC p a r a m e te r s t c a c p ( a c c e s s tim e fr o m CAS) a n d tA A P ( a c c e s s tim e fr o m c o l. a d d r . ) in A C CHARACTERISTICS.


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404BS1 KMM466F404BS2 KMM466F404BS2-L PDF

    Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372F404BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		KMM372F404BS 4Mx72 4Mx16 KMM372F404BS KMM372F404B 4Mx72bits KMM372F404B PDF

    Contextual Info: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 466F404AS1-Lto KMM466F404BS2-L 466F404AS2-L 4Mx16, PDF

    Contextual Info: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in


    OCR Scan     		372F804B 4Mx16 KMM372F804B 8Mx72bits x16bits 400mil 168-pin 372F804BS PDF

    Contextual Info: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


    Original     		KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    KMM372F804BS

    Contextual Info: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin PDF

    Contextual Info: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    Contextual Info: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B PDF

    Contextual Info: DRAM MODULE KM M 3 6 6 F 4 0 8 4 B S1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££TRt»ü£S DRAM MODULE KM M 3 6 6 F 4 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and


    OCR Scan     		4Mx64 4Mx16 KMM366F40 KMM366F404BS1 -KM416V4104BS KMM366F484BS1 -KM416V4004BS PDF

    Contextual Info: DRAM MODULE KMM466F804BS1-L Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter t CAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS.


    Original     		KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 150Max 81Max) PDF

    KMM374F804BS

    Contextual Info: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    Original     		KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin PDF

    Contextual Info: DRAM M ODULE KMM374F804BS Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F804BS Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		KMM374F804BS 8Mx72 4Mx16 74F804B KMM374F804BS x72bits PDF

    Contextual Info: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 F 4 0 4 B S Re v is io n H is to ry Version 0.0 (Sept. 1997) • R e m o v e d tw o A C p a ra m e te rs t c a c p (a c c e s s tim e fro m C A S ) a n d tA A P (a c c e s s tim e fro m col. a d d r.) in A C C H A R A C T E R I S T I C S .


    OCR Scan     		KMM372F404BS 4Mx72 4Mx16 372F404BS 4096cycles/64ms KMM372F404BS -KM416V4104BS KM44V4004CS PDF

    Contextual Info: DRAM MODULE KMM366F80 8 4BS1 KMM366F80(8)4BS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4BS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4BS1 consists of eight CMOS 4Mx16bits


    Original     		KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin PDF