KM416S4030C Search Results

KM416S4030C

Contextual Info: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N v a lu e (1 0 m A ) is c h a n g e d to 1 2 m A . Revision .2 (June 1998) - tSH (- 1 0 b in n in g ) is re v is e d . REV. 2 June '98 ELECTRONICS Preliminary CMOS SDRAM KM416S4030C

Contextual Info: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL

KM416S4030C

Abstract: 1M Synchronous DRAM samsung
Contextual Info: KM416S4030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030C is 67,108,864 bits synchronous high data

KM416S4030C

Contextual Info: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

KMM464S824CT1

Contextual Info: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

sekisui 5760

Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
Contextual Info: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii

Contextual Info: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM366S424CTF-G0

Contextual Info: PC66 SDRAM MODULE KMM366S424CTF KMM366S424CTF SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

29f016a

Abstract: NC32 74HCT125 ADDR12 TG22-3506ND MDIO10 TP181 VSS198 ADDR15 1R58
Contextual Info: 5 4 3 2 1 +5V This document is distributed in the hope that it will be useful, but WITHOUT ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. U1 DS1813/TO92 +5V +5V 1 VCC 14 NC 4 7 GND OUT 11 GND OUT1 8

KMM366S424CTS-gl

Abstract: KMM366S424CTS-G8 KMM366S424CTS-GH 4Mx64
Contextual Info: KMM366S424CTS PC100 SDRAM MODULE KMM366S424CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

gmZ4S

Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
Contextual Info: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.on.ca

Contextual Info: KMM464S424CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S424CT1 PC100 144pin SDRAM SODIMM KMM464S424CT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: Preliminary KMM464S824CT_ PC100 144pin SDRAM SODIMM Revision History Revision .1 November 1998 - Corrected PCB Height as 1.25inch @ PACKAGE Dimensions. REV. 1 Nov. 1998 Preliminary KMM464S824CT_ PC100 144pin SDRAM SODIMM

nc10 samsung

Abstract: 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36
Contextual Info: E D C B A SNDS200 Board Ver2.0 NetMCU : S3C4520A DRAM HDLC - 8MB SDRAM - EDO Support - 1 Bank - MCU Input Clock(10MHz) - USB Input Clock(10MHz) - FilterLogic Page2 ROM - 1 Channel RS232 I/F - 1 Channel V.35 I/F - DSUB25 Conn Page3 Page4 hdlc nDTRB nRTSB

KMM464S424CT1-FL

Abstract: KMM464S424CT1-FH
Contextual Info: Preliminary PC 100 144pin SDRAM SODIMM KMM464S424CT1 KMM464S424CT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S424CT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S424CT1 consists of four CMOS 4M x 16 bit

KMM464S824CT1-FH

Abstract: KMM464S824CT1-FL
Contextual Info: Preliminary PC100 144pin SDRAM SODIMM KMM464S824CT1 KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S824CT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

gmZ4S

Abstract: Genesis microchip dat gmZ4U MC141584 DSR-0012 HITACHI microcontroller 0xc0 genesis video controller gm72v161621et Genesis Microchip osd DAT-0012-B
Contextual Info: PRELIMINARY DATA SHEET gmZ4 DAT-0012-B December 1999 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288

Contextual Info: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Samsung S3C4510

Abstract: Samsung S3C4530 psos prepc S3C4510 78R33 regulator s3c4530 samsung sx1 led large 278R33 pSOS 78R3
Contextual Info: 40-S3-C4520A-072001 APPLICATION NOTE S3C4520A 32-Bit CMOS Microcontroller Revision 0 S3C4520A 32-BIT CMOS MICROCONTROLLER APPLICATION NOTES Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely

KMM366S424CTS-GL

Abstract: KMM366S424CTS
Contextual Info: KMM366S424CTS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 KMM366S424CTS PC100 Unbuffered DIMM KMM366S424CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

KMM366S824CT-G8

Abstract: KMM366S824CT-GH KMM366S824CT-GL
Contextual Info: KMM366S824CT PC100 Unbuffered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May 1999 PC100 Unbuffered DIMM KMM366S824CT KMM366S824CT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD