KM23V81 Search Results

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)

Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)

42-DIP-6Q0

Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

A18T

Abstract: 23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

tl 0741

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

Contextual Info: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)

Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512KX16) CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • Switehable organization 1,048,576 x 8(byte mode) 524,288 x 16(worcl mode) • Random access time/Page Access Time 3.3V Operation: 100/3Qns(Max.)

Contextual Info: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access tim e/Page Access Tim e 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.)

Contextual Info: KM23V8100P E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEA TU R ES G EN ERA L DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 100ns(Max.) 3.0V operation: 120ns(Max.)

KM23V8105D

Abstract: KM23V8105DG
Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)

KM23V8100D

Abstract: KM23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

KM23V8105D

Abstract: KM23V8105DET KM23V8105DT TSOP-23-5
Contextual Info: KM23V8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)

Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

Contextual Info: KM23V8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)

Contextual Info: CMOS MASK ROM KM23V81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)

Contextual Info: KM23V8100C G/T ELECTRONICS CMOS Mask ROM 8M-Bit (1M X 8/512 K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) ■Supply voltage : single +3.3V

8100B 42 pin

Contextual Info: PRELIMINARY CMOS MASK ROM KM23V81 OOB G 8M-Bit (1M X8I512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage : single+3V or +3.3V

KM23V8100D

Abstract: KM23V8100DET KM23V8100DT
Contextual Info: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V

Contextual Info: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access tim e/Page Access Tim e 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.)

73SA

Abstract: 576X8 ttl 74142
Contextual Info: KM23V8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512K x 16 M-ROM(Extended Temperature Product) GENERAL DESCRIPTION • Switchable organization 1,048,576x8 (byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage : single +3.3V

KM23V8100D

Abstract: KM23V8100DG
Contextual Info: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V