KING 525 Search Results

5501a

Contextual Info: Surface Mount Chip LED Lamps Z-Bend DOMILED PLCC Chip Package Part No. Emitted Color λd nm Hyper Red 643 Super Red 632 Lens Appearance Min. Max. 45.0 90.0 45.0 112.5 71.5 180.0 71.5 180.0 112.5 285.0 112.5 224.0 180.0 450.0 112.5 224.0 180.0 450.0 71.5

king 525

Abstract: MHL19338
Contextual Info: MOTOROLA Order this document by MHL19338/D SEMICONDUCTOR TECHNICAL DATA The RF Line PCS Band RF Linear LDMOS Amplifier MHL19338 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding

MV5253

Abstract: MV5352 MV5056 MV5252 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-2
Contextual Info: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source

Contextual Info: MHL18336N Rev. 3, 1/2005 Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

MHL19338N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MHL19338N Rev. 4, 1/2005 Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier MHL19338N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MHL18336 Rev. 2, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHL18336N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: MHL19338 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHL19338N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

301AP

Contextual Info: Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

Contextual Info: Document Number: MHL18336N Rev. 5, 8/2006 Freescale Semiconductor Technical Data Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

Contextual Info: MHL19338 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Replaced by MHL19338N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHL19338 Designed for ultra- linear amplifier applications in 50 ohm systems operating in

MHL18336N

Abstract: MHL18336
Contextual Info: Freescale Semiconductor Technical Data PCS Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

Contextual Info: Document Number: MHL19338NN Rev. 0, 12/2006 Freescale Semiconductor Technical Data MHL19338NN Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

173-3284

Abstract: LPQ152 LPQ150 sk41 LPQ152-C
Contextual Info: Order Model Output Minimum Maxim um Load with Maxim um Load Peak Code Number Voltage Load5 Convection Cooling6 W /30CFM A ir6 Load1 Regulation2 Ripple P/P P A R D 3 289-5024 LPQ152-C 5 V 12 V -12 V ± 5 -2 5 V 4 2 A 0.1 A 0.1 A 0 A 15A 6 A 2 A 2.5A 22 A

MHL21336

Contextual Info: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA The RF Line 3G Band RF Linear LDMOS Amplifier MHL21336 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

uPD6456

Abstract: PD6456
Contextual Info: b42?525 OOMTflöc? 44^ « N E C E MOS INTEGRATED CIRCUIT m . ¿¿PD6456 a 12 LINESX24 COLUMNS ON-SCREEN CHARACTER DISPLAY CMOS LSI FOR VCR CAMERA DESCRIPTION The /xPD6456 is on-screen character display CMOS LSI which is combined with microcomputers and used for VCR

J-Squared Technologies

Contextual Info: S a l e s re p r e s e n t a t i v e s S a k s re p r e s e n t a t i v e s DOMESTIC REPS ALABAMA Concord Component Reps, Inc. 190 Lime Quarry, Suite # 102 Madison, AL 3 5758 205 772-8383 ARKANSAS Southern Sutes Marketing, Inc. 1702 N Collins Blvd., Suite # 2 5 0

Contextual Info: MHL21336 Rev. 4, 1/2005 Freescale Semiconductor Technical Data Replaced by MHL21336N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHL21336 Designed for ultra- linear amplifier applications in 50 ohm systems operating in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 6, 7/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MHL21336 Rev. 4, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHL21336N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MHL21336N

Abstract: 1800 ldmos
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

Contextual Info: Document Number: MHL21336N Rev. 8, 12/2006 Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating

74LS153 multiplexer truth table

Abstract: 74LS153 74LS153 multiplexor TTL 74ls153 LS153 SN54LSXXXJ SN74LSXXXD SN74LSXXXN
Contextual Info: SN54/74LS153 DUAL 4-INPUT MULTIPLEXER The LSTTL / MSI SN54 / 74LS153 is a very high speed Dual 4-Input Multiplexer with common select inputs and individual enable inputs for each section. It can select two bits of data from four sources. The two buffered outputs present data in the true non-inverted form. In addition to multiplexer