2002 - transistor C546
Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: diode RED 10mA LED SMD YELLOW 10mA LED SMD GREEN 10mA LED SMD PNP 40V/800mA Small signal transistor NPN 50V/0.1A 10k Rb switch transisistor NPN 60V/6A Planar High current transistor NPN 40V/600mA Small signal transistor 4K I2C serial EEPROM 5V/0.5A Buck Converter TEXAS INSTRUMENTS INTEGRATED , , C540, C541, C547 , C548, C580, C581, C587, C588, C600, C663, Q304, R104, R260, R261, R262, R263, R264
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TAS5100EVM
SLEU010A
transistor C546
transistor C547 npn
smd diode C543
transistor c693
smd diode c548
transistor C372
c528 transistor
c545 transistor
transistor c367
smd diode c524
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1998 - NPN general purpose silicon transistors
Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Text: dimensions (Units: mm) FStructure Epitaxial planar type NPN / PNP silicon transistor FAbsolute maximum , . FStructure Epitaxial planar type NPN / PNP silicon transistor (Built-in resistor type) The following , be cut in half. FStructure A PNP and a NPN digital transistor (each with a single built in resistor , area can be cut in half. FStructure NPN / PNP epitaxial planar silicon transistor FExternal dimensions , (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors
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94S-830-AC115E)
96-458-AC124T)
IMD10A
96-555-IMD10)
IMD16A
96-473-IMD16)
94S-902-AC144T)
94S-904-AC114Y)
2SA1036K
2SC411K
NPN general purpose silicon transistors
Transistors General
UMZ1N
transistor 526
c114e
transistors
C124E
dual npn 500ma
581 PNP
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schematic diagram 48 volt UPS
Abstract: 12 volt zener diode on pspice 74 Series IC Manual TM3J pnp npn dual emitter connected 750 ohm resistor pnp high emitter base voltage 15 volt design manual transistor schottky model spice 7.5 volt zener diode on pspice
Text: transistor in the 700 Series has three modes of operation, NPN transistor , lateral PNP transistor , and substrate PNP transistor . Pin Function 1. NPN Base, PNP Collector 2. NPN Emitter 3. NPN Collector, PNP , Emitter NPN Transistor As an NPN transistor there are two separate bases and three emitters which you , 24mA (8mA per emitter) The base emitter junction of the NPN transistor makes an excellent 5.9 volt , ) 3 E C I SEMICONDUCTOR MflE D 30267^7 DDDDDb? TMb «ECIS T-M-3J EEI NPN Transistor hFE vs Ic (1
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800MHz)
schematic diagram 48 volt UPS
12 volt zener diode on pspice
74 Series IC Manual
TM3J
pnp npn dual emitter connected
750 ohm resistor
pnp high emitter base voltage 15 volt
design manual
transistor schottky model spice
7.5 volt zener diode on pspice
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor . 3-39 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor . 3-43 NPN Silicon High Speed Switching Transistor
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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2014 - Not Available
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN / NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NPN / NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning , NXP Semiconductors NPN / NPN high power double bipolar transistor 8. Limiting values Table 5 , Semiconductors NPN / NPN high power double bipolar transistor aaa-014341 4 Ptot (W) 3 (1) 2 1
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PHPT610035NK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610035PK.
PHPT610035NPK.
AEC-Q101
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K3NC-PB1A
Abstract: RELAY SPDT rising edge EN61010-1 IEC1010-1 K31-L6 omron k31-c2 K3NC-NB1A K3NC-NB2C SU104 su101
Text: -422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector) K31-L10 Yes Yes
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50-kHz
IEC1010-1)
EN61010-1
N089-E1-1A
0698-1M
K3NC-PB1A
RELAY SPDT rising edge
EN61010-1
IEC1010-1
K31-L6
omron k31-c2
K3NC-NB1A
K3NC-NB2C
SU104
su101
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2014 - Not Available
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN / NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN / NPN high power double bipolar transistor in a SOT1205 , NXP Semiconductors NPN / NPN high power double bipolar transistor 5. Pinning information Table 2 , reserved 3 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor , reserved 5 / 15 PHPT610030NK NXP Semiconductors NPN / NPN high power double bipolar transistor
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PHPT610030NK
OT1205
LFPAK56D)
PHPT610030PK.
PHPT610030NPK.
AEC-Q101
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1999 - Darlington pair IC with 15 Amp
Abstract: disadvantages of capacitor 150 watt amplifier advantages and disadvantages PNP DARLINGTON SINK DRIVER 500ma darlington pair transistor 1A power Junction FET advantages and disadvantages sr004 amplifier advantages and disadvantages linear regulator application
Text: the sum of the VCE for the PNP transistor plus the VBE of each NPN transistor or 2VBE ( NPN ) + VCE(sat , the NPN darlington and PNP transistor composite or ILOAD/b3. The NPN darlington output stage is still , , a PNP transistor occupies more die area to pass the same amount of current as an NPN transistor . Due , power NPN transistor , driven by a PNP transistor . The total dropout voltage is VBE ( NPN ) + VCE(sat)(PNP , structure, the base drive of the NPN pass transistor flows into the load and only the smaller bias current
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2012 - NPN TRANSISTOR SMD MARKING CODE B2
Abstract: DFN2020-6
Text: PBSS4230PAN 14 December 2012 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN / NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 5. Pinning , Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor Symbol Per device Rth(j-a , NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W
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PBSS4230PAN
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS5230PAP.
AEC-Q101
NPN TRANSISTOR SMD MARKING CODE B2
DFN2020-6
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2002 - TRANSISTOR SMD MARKING CODE
Abstract: TRANSISTOR SMD MARKING CODE A1 transistor data cd 100 smd code book B3 transistor MARKING SMD npn TRANSISTOR pulse to sinewave convertor smd transistor marking B3 TRANSISTOR SMD MARKING CODE UA schottky transistor npn PMEM4010PD
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor , specification NPN transistor /Schottky diode module PMEM4010ND PINNING FEATURES · 600 mW total power , : PMEM4010PD. 2002 Oct 28 2 Philips Semiconductors Product specification NPN transistor , System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO , NPN transistor /Schottky diode module PMEM4010ND CHARACTERISTICS Tamb = 25 °C unless otherwise
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M3D302
PMEM4010ND
SCA74
613514/01/pp12
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE A1
transistor data cd 100
smd code book B3 transistor
MARKING SMD npn TRANSISTOR
pulse to sinewave convertor
smd transistor marking B3
TRANSISTOR SMD MARKING CODE UA
schottky transistor npn
PMEM4010PD
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2010 - Not Available
Abstract: No abstract text available
Text: PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Rev. 1 - 14 July 2010 Product data sheet , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor Quick reference data .continued , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 , Semiconductors PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 10 006aac305 , PBSS4032SPN 30 V NPN /PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb =
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PBSS4032SPN
OT96-1
PBSS4032SPN
OT96-1
PBSS4032SN
PBSS4032SP
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2003 - smd TRANSISTOR code b6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor , NPN transistor /Schottky-diode module PMEM4020ND PINNING FEATURES · 600 mW total power , (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current , 2 VERSION SOT457 Philips Semiconductors Product specification NPN transistor , ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO
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M3D302
PMEM4020ND
SCA75
R76/01/pp11
smd TRANSISTOR code b6
MOSFET TRANSISTOR SMD MARKING CODE A1
smd diode code B6
TRANSISTOR SMD MARKING CODE
smd code marking BM
MARKING SMD npn TRANSISTOR R
TRANSISTOR SMD MARKING CODE A1
smd TRANSISTOR code marking AV
smd TRANSISTOR marking b6
B6 DIODE schottky
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2009 - marking code E5 SMD ic
Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
Text: BC846BS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a very , 65 V, 100 mA NPN / NPN general-purpose transistor 006aab619 103 Zth(j-a) (K/W) =1 0.75 , BC846BS NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor Table 8 , NXP Semiconductors 65 V, 100 mA NPN / NPN general-purpose transistor 11. Soldering 2.65 solder
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BC846BS
OT363
SC-88
BC856BS
BC846BPN
AEC-Q101
BC846BS
marking code E5 SMD ic
smd transistor marking e5
TRANSISTOR SMD CODE PACKAGE SOT363
marking code e5 sot363
MARKING CODE E5 NXP
BC846BPN
E5 SMD Transistor
TRANSISTOR SMD MARKING CODES
transistor SMD MARKING CODE
MARKING CODE SMD IC
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2013 - Not Available
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 11 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4130PAN NXP Semiconductors 30 V, 1 A NPN / NPN low VCEsat (BISS) transistor
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PBSS4130PAN
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS5130PAP.
AEC-Q101
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1998 - PNP DARLINGTON SINK DRIVER 500ma
Abstract: 150 watt amplifier advantages and disadvantages power Junction FET advantages and disadvantages Darlington pair IC with 15 Amp disadvantages of capacitor darlington pair transistor 1A npn darlington transistor 150 watts PNP DARLINGTON SINK DRIVER CS8121 LM109
Text: transistor plus the VBE of each NPN transistor or to rise. In response, the voltage at the non inverting , is the load current divided by the gain of the NPN darlington and PNP transistor composite or ILOAD , . The pass device is a single power NPN transistor , driven by a PNP transistor . The total dropout , counterpart. In the composite structure, the base drive of the NPN pass transistor flows into the load and , current as an NPN transistor . Due to the fact that bipolar processes are optimized around the NPN device
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pnp germanium transistor
Abstract: germanium transistors PNP Germanium Transistors
Text: METER SCALES GOOD NPN or PNP Ge or Si , Base or Gate for good transistor or FETâs Readable , leakage limits Does not apply NPN or PNP Ge or Si , Base or Gate for good transistor or FETâs , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K Precision model 520C Transistor Tester is designed for in-circuit and out-of circuit transistor testing , devices. â Front Panel socket for out-of âcircuit transistor testing. Model 510A Portable
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2012 - marking code 2R
Abstract: No abstract text available
Text: PBSS4112PAN 29 November 2012 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Product data , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor Symbol IBM Ptot Parameter peak base current , 4 / 17 NXP Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor , PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aad167 duty , Semiconductors PBSS4112PAN 120 V, 1 A NPN / NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102
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PBSS4112PAN
DFN2020-6
OT1118)
PBSS4112PANP.
PBSS5112PAP.
AEC-Q101
marking code 2R
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2013 - Not Available
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PAN 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 14 January 2013 , ) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN , product PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor 5 , A NPN / NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5 , reserved 4 / 17 PBSS4160PAN NXP Semiconductors 60 V, 1 A NPN / NPN low VCEsat (BISS) transistor
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PBSS4160PAN
DFN2020-6
OT1118)
PBSS4160PANP.
PBSS5160PAP.
AEC-Q101
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2001 - IC DATE CODE
Abstract: complementary npn-pnp BC847BVN
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN /PNP general purpose transistor , specification NPN /PNP general purpose transistor FEATURES BC847BVN PINNING · 300 mW total power , 3 2 3 MAM443 Top view NPN /PNP transistor pair in a SOT666 plastic package. MARKING , 07 2 Philips Semiconductors Product specification NPN /PNP general purpose transistor , nA NPN transistor VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA Cc collector
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M3D744
BC847BVN
SC-75/SC-89
SCA73
613514/02/pp8
IC DATE CODE
complementary npn-pnp
BC847BVN
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k31c2
Abstract: XM2A-2501 XM2A-3701 XM2S-2511 XM2D-0901 EN61010-1 IEC1010-1 K31-L1 K31FLK6 K31-FLK3
Text: - RS-422 K31-FLK3 Yes - BCD output + 5 transistor outputs ( NPN open collector) K31-B4 Yes Yes 4 to 20 mA + 5 transistor outputs ( NPN open collector) K31-L4 Yes Yes 1 to 5 V + 5 transistor outputs ( NPN open collector) K31-L5 Yes Yes 1 mV/10 digits + 5 transistor outputs ( NPN open collector) K31-L6 Yes Yes 0 to 5 VDC + 5 transistor outputs ( NPN open collector) K31-L9 Yes Yes 0 to 10 VDC + 5 transistor outputs ( NPN open collector
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50-kHz
N088-E1-1A
0698-1M
k31c2
XM2A-2501
XM2A-3701
XM2S-2511
XM2D-0901
EN61010-1
IEC1010-1
K31-L1
K31FLK6
K31-FLK3
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2009 - PBSS2515YPN
Abstract: No abstract text available
Text: Product data sheet 15 V low VCE(sat) NPN /PNP transistor FEATURES PBSS2515YPN QUICK REFERENCE DATA , TR2 DESCRIPTION TR1 NPN /PNP low VCEsat transistor pair in a SC-88 plastic package. 1 2 , Semiconductors Product data sheet 15 V low VCE(sat) NPN /PNP transistor PBSS2515YPN LIMITING VALUES , VCE(sat) NPN /PNP transistor PBSS2515YPN CHARACTERISTICS Tamb = 25 °C unless otherwise , voltage VCE = 2 V; IC = 100 mA; note 1 â â 0.9 V NPN transistor fT transition
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MBD128
PBSS2515YPN
SC-70
R75/03/pp11
PBSS2515YPN
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2001 - NPN/PNP transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCEsat NPN /PNP transistor , specification 15 V low VCEsat NPN /PNP transistor FEATURES PBSS2515VPN QUICK REFERENCE DATA · 300 mW , turn-on voltage VCE = 2 V; IC = 100 mA; note 1 - - 0.9 V NPN transistor fT , specification 15 V low VCEsat NPN /PNP transistor PBSS2515VPN MLD648 102 handbook, halfpage , 15 V low VCEsat NPN /PNP transistor PBSS2515VPN MLD649 600 MLD651 -1200 VBE
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M3D744
PBSS2515VPN
SCA73
613514/02/pp12
NPN/PNP transistor
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2008 - transistor marking DG
Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor / 100 mA NPN resistor-equipped transistor , general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one SOT363 (SC-88) very small , 50 V, 200 mA NPN general-purpose transistor /100 mA NPN RET 2. Pinning information Table 2 , NPN general-purpose transistor /100 mA NPN RET Table 5. Limiting values .continued In accordance , NXP Semiconductors 50 V, 200 mA NPN general-purpose transistor /100 mA NPN RET 6. Thermal
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OT363
SC-88)
AEC-Q101
transistor marking DG
TRANSISTOR SMD MARKING CODE pa
marking code DG SMD Transistor
dg transistor smd
NXP SMD TRANSISTOR MARKING CODE
SMD transistor code 132
transistor smd code marking 101
transistor smd code marking 102
TRANSISTOR SMD CODE PACKAGE SOT363
marking code BV SMD Transistor
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2009 - NXP SMD MARKING CODE ZK
Abstract: npn transistor footprint SC74 marking 345 TRANSISTOR SMD MARKING CODE ce marking code ZK NXP SMD TRANSISTOR MARKING CODE zk smd transistor marking code 24 transistor 102 aec
Text: BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Rev. 01 - 17 July 2009 Product data sheet 1. Product profile 1.1 General description NPN / NPN general-purpose transistor pair in a small , Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor 2. Pinning information Table 2 , of 12 NXP Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Table 5 , of 12 NXP Semiconductors BC846DS 65 V, 100 mA NPN / NPN general-purpose transistor Table 7
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BC846DS
OT457
SC-74)
AEC-Q101
BC846DS
771-BC846DS115
NXP SMD MARKING CODE ZK
npn transistor footprint
SC74 marking 345
TRANSISTOR SMD MARKING CODE ce
marking code ZK
NXP SMD TRANSISTOR MARKING CODE zk
smd transistor marking code 24
transistor 102 aec
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2007 - 4350SS
Abstract: 4350S PBSS4350SPN PBSS4350SS PBSS5350SS
Text: PBSS4350SS 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor Rev. 01 - 3 April 2007 Product , ] PBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 2. Pinning , NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor Table 6. Limiting values , NXP Semiconductors 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 6. Thermal characteristics , 50 V, 2.7 A NPN / NPN low VCEsat (BISS) transistor 006aaa810 103 duty cycle = Zth(j-a) (K/W
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PBSS4350SS
OT96-1
PBSS4350SPN
PBSS5350SS
PBSS4350SS
4350SS
4350S
PBSS4350SPN
PBSS5350SS
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