KF 35 TRANSISTOR Search Results

SU SERIES CAPACITOR ALUMINIUM

Contextual Info: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC

Contextual Info: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC

25r06

Contextual Info: FF 25 R 06 KF 2 Therm ische Eigenschaften Transistor Transistor R thjc Elektrische Eigenschaften Electrical properties RthCK H ö ch s tz u lä s s ige W e rte V ces M axim u m rated va lu e s 600 V 25 A lc Thermal properties °C /W 0,5 DC, p ro B a u ste in / p e r m od u le

kf 202 transistor

Abstract: Chirp spice gummel SR770 spectra physics
Contextual Info: Measurement of ‘1/f’ Noise in Narrow Poly-silicon Emitter Bipolar Transistor Structures. S.D. Connor Bipolar Characterization Group, Central R&D, GEC Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here our initial findings on low frequency

855E

Abstract: UPA862TD AN1026 NE685 S21E UPA862TD-T3 BF109 mje 13006 bf 9673
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)

KF 517

Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)

TVR06

Abstract: n50t
Contextual Info: FZ 400 R 06 KF 2 Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B a u ste in /p e rm o d u le 0,089 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcE S 600

2n3904 2n3906

Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Contextual Info: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0

ff-130

Abstract: diode SS 3
Contextual Info: FF 100 R 06 KF 2 Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V lc 100 A IcRM </ E 200 A O 10 Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u s te in /p e rmodule 0,155 DC, pro Zweig / per arm 0,31

Contextual Info: FF 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C 0,50 DC, pro Zweig / per arm

nec 16312 transistor

Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS

transistor c 6073

Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03
Contextual Info: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS

8313 transistor to-3

Abstract: board ccb2 kf 982 855E transistor Bf 981
Contextual Info: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon

nec 16312 transistor

Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS

transistor Bf 966

Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1

kme-3 baustein

Contextual Info: FF 300 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0 ,0 5 RthJC DC, pro Baustein / per module 0 ,1 pro Baustein / per module

kp 1006

Abstract: AN1026 S21E UPA895TD UPA895TD-T3-A
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. NEC's

vqe 24 d

Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Contextual Info: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties

HBFP0420TR1

Abstract: transistor KF 517
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

FZ 300 R 06 KL

Contextual Info: FF 400 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V cE S Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,0345°C/W DC, pro Z w e ig /p e r arm

7400N

Abstract: CPH3249A 9500M
Contextual Info: CPH3249A SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 135.0f NF 1 IKF 195.0m NE 2 NR 1 IKR 75.00m NC 1.9 IRB 200.0m RE 73.00m XTB 2 XTI 3 VJE 680.0m TF 7n VTF 1.000K PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A

2SC4519

Contextual Info: 2SC4519 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 70.00f NF 1 IKF 900.0m NE 2 NR 1 700.0m IKR NC 2 IRB 400.0u RE 175.0m XTB 2 XTI 3 VJE 680.0m TF 300p VTF 5 PTF VJC 550.0m XCJC 1 FC 50p AF 1 Temp = Date : Unit A A A A Ohm