KC 581 Search Results

Contextual Info: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a C M O S integrated circuit designed for making various tim ing pulses for B/W CCD cam era. FEATURES - C om patible with both EIA and C CIR mode EIA : KC 73125(U -M , C CIR : KC 73129(U )-M )

Contextual Info: Pomona In te rn atio n al S ales O ffices Argentina Hungary Int’l Electronic Distributors Phone 54 1 4757608 Fax: (54) 1 7303495 SMD Technology Phone (36)1 3707994 Fax (36) 1 3707994 Australia India KC Electronics Phone (61)39 8481266 Fax (61) 39 8481799

D2334

Abstract: IC LM320 LM320-15KC IC LM320 output voltage LM320-12 LM32M LM320 LM320 voltage regulator LM320-12KC 12 volts electronic ballas
Contextual Info: TEXAS INSTR -CLIN/INTFC} SS Ö961724 tfcXAS D eT| 0=^1724 0034521 S | ~ INS1R L I N / INTFC r 55C 3 4 5 2 1. 5 8 - 1 1 - 1 3 ^ TYPE SERIES LM320 3-TERMINAL NEGATIVE-VOLTAGE REGULATORS LINEAR INTEGRATED CIRCUITS D 2334, A PRIL 1983 KC PACKAGE • 3-Terminal Regulators

Readout Tubes

Abstract: RAYTHEON Raytheon Company tube 5814 100 KC 5814 Tube
Contextual Info: rAYTHÈOm TECHNICAL INFORMATION SERVICE Teclinical Information CK6910 DECADE COUNTER MECHANICAL DATA E N V E L O P E : . T - l 1 Glass The CK6910 is a cold cathode ga s—fi i I e d counter tube. 100 KC high speed b id ir e c tio n a l ring stepping decade

Carbon Rotary Potentiometers - 16 mm size

Abstract: Radiohm CIP160C P160EKC P160BA P160KC potentiometer spindle EP162KC CIP162C P162EKC
Contextual Info: Radiohm da 49 a 86 • 1997 22•12•1997 11:20 Pagina 3 Types CIP160C P160C Carbon Rotary Potentiometers - 16 mm size Singles Mechanical data Rotation angle: 270° ± 5° Operating torque: 0.4 ÷ 1.5 Ncm Permissible torque at end stop: 35 Ncm max Permissible axial spindle load:

P160KC

Abstract: CIP160KC CIP162KC 5812 0.75 MM resistance CIP160ZC F22-F23 Carbon Rotary Potentiometers - 4 mm size P160K Carbon Rotary Potentiometers - 16 mm size
Contextual Info: Singles Plastic Case M echanical data Rotation angle: Operating torque: Permissible torque at end stop: Permissible axial spindle load: 270° ± 5° 0.4 + 1.5 Ncm 60 Ncm max 100 N 5 sec max Z2 at 50% of rotation Tap: W eight, std. spindle: Optional features

5819

Contextual Info: PRELIM INARY SPECIFICA TIO N SEC / THiN FILM HYBRID INTEGRATED C IR C U IT MC-5819 ElfCTRON DEVICE 6427525 N E C ELECTRONICS INC 72C 08414 D 550 MHz 18 dB INPUT CATV TRUNK AMPLIFIER r\ D E S C R IP T IO N A N D A P P L IC A T IO N S The MC-5819 is a thin film hybrid integrated circuit designed for V H F - C A T V application in the 40 to 550 MHz band. The MC-

vx 1937

Contextual Info: |U|IC=RON 64K SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED Al + 3'3VSUPPLYBURST ’PIPELIN EDAND SELECTABLE MODE • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6 and 7ns Fast OE# access times: 4.5, 5 and 6ns Single +3.3V +10%/-5% power supply

X206-1

Contextual Info: ADVANCE |U |IC = R O N 256K X M T58LC256K16/18C5 16/18 SYNCBURST SRAM 256K X 16/ 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 , 6 and 7ns

Contextual Info: PRELIMINARY M T58LC 64K 32C 6 6 4 K X 32 S Y N C B U R S T SRAM I^ IC R D N 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim e: 7ns

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

12AT7

Abstract: Readout Tubes Raytheon Company raytheon
Contextual Info: Teclinical TECHNICAL INFORMATION SERVICE Information CK6909 DECADE COUNTER MECHANICAL DATA T h e C K 6 9 0 9 is a cold cathode g a s - f i l l e d 100 K C high speed b i - d i r e c t i o n a l counter tube. ring stepping decade T h i s ty p e f e at u re s d ir e c t v is ua l neon g lo w readout on any of the ten r a d ia ll y spaced

Contextual Info: ADVANCE |U |I C R O N 256K 256KX 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6 and 7ns F ast O E# access tim es: 4 .5 ,5 an d 6ns

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: PRELIMINARY MT58LC64K32C6 64KX 32 SYNCBURST SRAM MICRON I T6CHN0L0GY. INC SYNCHRONOUS 64K x 32 SRAM C D A A /I O r lM IV I +3.3V SUPPLY, PIPELINED A SELECTABLE BURST MODE FEATURES • • • • • • • • OPTIONS S A -1 ». O o. * 5 $ 81* ; 3 Í

Contextual Info: |V /llC R O Í\J 128K +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim es: 4.5 , 5, 6 an d 7ns Fast O E # access times: 4.5, 5 and 6ns Single +3 .3 V + 1 0 % /-5 % p o w er supply

Contextual Info: ADVANCE [V/|IC=RON 128K 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP F ast access tim es: 4 .5 , 5 , 5.5 a n d 6ns

2SB611A

Abstract: SK40C 2SD581 2SB611 2SD581A TK1212 7B05A SD581
Contextual Info: 2SD581,2SD581A SIL IC O N NPN J a 2 * > 7 NPN E PIT A X IA L 4 0 - 6 0 W AUDIO AMP. P O W E R O U T P U T Complementary pair w ith 2SB611/A 40-60W t - r l 2SB611.611A £ ^ > 7 ' J * 1. - X Base 2. i ; -,9 Em ittor 3. ÿ9 Co llecto r ! *r - X 7 9 h it'J Accessories

e225 capacitor

Abstract: kemet capacitor C0603 T491C336 kemet c0805c 106 6K tantalum capacitors 10pf 6.4v 0805 package ceramic capacitor BB 313 kc 637 kemet 471 1kv Suf 46 hg
Contextual Info: Surface Mount Capacitors • Solid & Organic Tantalum • Multilayer Ceramic • Solid Aluminum www.kemet.com F3102 4/10 KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, 864 963-6300 INDEX SOLID TANTALUM CHIP CAPACITORS PAGE GENERAL PERFORMANCE

transistor kc 2026

Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
Contextual Info: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart­

SOURIAU 8 TFD

Abstract: 8TFD 8TFD00
Contextual Info: souriau 8TFLT - 8TFD Applications Description - Military - Aeronautical 8TFLT and 8 TFD filter connectors are equiped with planar arrays filters. These connectors have the same lenght as the standard connectors of the same series so as to be directly interchangeable, and allow

F-3102M

Abstract: CWR11 T496 T498 T510 C-728 ballast schematic military capacitors T495X107 2003 FR E500
Contextual Info: Surface Mount Capacitors • Solid & Organic Tantalum • Multilayer Ceramic • Solid Aluminum www.kemet.com F-3102M 03/07 INDEX SOLID TANTALUM CHIP CAPACITORS PAGE GENERAL PERFORMANCE

E3K3

Abstract: T491C336 Ta2O5 phase diagram CWR11 T496 T498 T510 conductive polymer aluminum solid capacitor mil std gk 1936 conductive polymer capacitor mil std
Contextual Info: Surface Mount Capacitors • Solid & Organic Tantalum • Multilayer Ceramic • Solid Aluminum www.kemet.com F-3102M 03/07 INDEX SOLID TANTALUM CHIP CAPACITORS PAGE GENERAL PERFORMANCE

transistor kc 2026

Abstract: RNS-D Germanium Transistor M/transistor kc 2026
Contextual Info: MIL-S-19500/68A • a Miv "\o££ J *^rw w SUPERSEDING M IL -T -19500/68 Sig C 10 F ebruary 1959 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE;, TRANSISTOR, 2N- i2o> -PNP* GERMANIUM* SWITCHING T his specification is m andatory for use by a ll D epart­ m ents and A gencies of the D epartm ent of Defense.