KBU 10M Search Results

kbu 10j

Contextual Info: KBU G 10/15/25/35A SERIES GLASS PASSIVATED REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT -10/15/25/35 Amperes BRIDGE RECTIFIERS FEATURES • Surge overload rating - 200-400 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing

kbu 25j

Abstract: t 780 kbu 10m X23L kbu 25m
Contextual Info: KBU 10/15/25/35A SERIES SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORW ARD CU RREN T -1 0 /1 5 /2 5 /3 5 Am peres FEATURES • Surge overload rating - 1 5 *X 2 3 l 3 8v'X 5 71 HOLE TK?U 240-400 amperes peak • Ideal for printed circuit board

kbu 10m

Abstract: KBU10M AK 1030 KBU10A
Contextual Info: CURRENT 10.0 Amperes VOLTAGE 50 to 1000 Volts KBU10A THRU KBU10M Features A • Low Forward Voltage Drop, High Current Capability · Surge Overload Rating to 300A Peak · Ideal for Printed Circuit Board Applications · Case to Terminal Isolation Voltage 1500V

kbu 10m

Abstract: KBU10M KBU BRIDGE RECTIFIER KBU10A single phase bridge rectifier 100A thermal KBU10J 100A CURRENT SINGLE PHASE bridge rectifier KBU10K kbu 10j
Contextual Info: MASTER INSTRUMENT CORPORATION SINGLE-PHASE BRIDGE RECTIFIER KBU10A THRU KBU10M VOLTAGE RANGE CURRENT FEATURES l Low cost l This series is UL recognized under component index , file number E127707 l High forward surge current capability l Ideal for printed circuit board

kbpc10-04

Abstract: KBPC2508
Contextual Info: QUICK GUIDE TO BRIDGE RECTIFIERS l„ A 1.0 1.5 1.5 1.0 2.0 2 0 2.0 4.0 4.0 6.0 8 0 I (A) @ T, (°C ) 40 25 50 75 25 50 55 50 65 40 100T 'h T; (°C ) 50 30 60 60 200 250 300 VB = 50 (V) D F 005M W 005M \G KBP005M 3N 246 2W 005M 2KBP005M 3 N 253 KBL005 '

SMD DIODE UF4007

Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Contextual Info: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and

Contextual Info: 2 W att ZEN ER DIODES M V to 200V D a ta Sheet iemiconductor Features • PRO ELECTRON REGISTRATION ■ HIGH SURGE CAPABILITY—50 W 10mA Maximum Ratings ■ WIDE VOLTAGE RAN G E-34 to 200V ■ MEETS UL SPECIFICATION 84V-0 Units BZY47C3V3.C200 DC Power Dissipation with TA = > = 70°C .PD

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

2SD287A

Abstract: 2SB539A 2SB539 2SD287C
Contextual Info: 2SD287A, B, C /2SB 539A , B, G 2SD287A, B, C 2SB539A, B, C N PN /PN P NPN/PNP S ILIC O N TRIPLE DIFFUSED M E S A TR A N S ISTO R / 'A u d i o FrequH ncy P o w e r A m p lifie r Jf » /F E A T U R E S • 70-8QW H; F i 7 ^ 7 'J / V 9 ' *< 7 - b 7 > 5> X 7

Contextual Info: 200 mW EPITAXIAL PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions Description Pin 3 1 P ln lN C ! Pin 2 Features • PLANAR PROCESS ■ INDUSTRY STANDARD SOT-23 PACKAG E ■ 200 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 E le c t r ic a l C h a r a c t e r is t ic s 6

Contextual Info: Data Sheet 2 .0 Amp SINGLE PHASE SILICON BRIDGE 'emiconductor M echanical Dim ensions Features • COMPACT SIZE ■ 200 AMP SURGE OVERLOAD RATING ■ LOW LEAKAGE CURRENT ■ MEETS UL SPECIFICATION 94V-0 Units E le c tric a l C h a ra c te ris tic s @ 25*C .

Contextual Info: 500 mW EPITAXIAL PLAN AR DIODES D ata Sh eet miconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 IN4448 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M axim u m R a tin g s

Contextual Info: 10 to15 Amp D ata Sheet SIN G LE PHASE SILICO N BRIDGE Description Mechanical Dimensions K < * o Features • BUILT-IN INTEGRAL HEAT SIN K ■ UP TO 300 AMP SURGE OVERLOAD RATING B ^ UL RECOGNITION AVAILABLE ■ SMALL PACKAGE Electrical Characteristics @25°C.

Contextual Info: Data Sheet 200 mW EPITAXIAL PLANAR DIODES Semiconductor Mechanical Dimensions Description Pin 3 Pin 1HC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 200 mW POWER DISSIPATION E le c tr ic a l C h a r a c te r is tic s 9

Contextual Info: Data Sheet 2.0 A n * S C H O T TK Y BARRIER RECTIFIERS miconductor Features • LOW FORWARD VOLTAGE ■ PLANAR PROCESS FOR RELIABILITY ■ HIGHSPEED SWITCHING ■ M EETS U L SPECIFICATION 94V-0 Units SR220. . . 260Senas E le c trica l C h a ra cte ristics @ 25*C.

Contextual Info: PCI Semiconductor Fast Orb - 32 Amp SMD Avalanche AUTOMOTIVE RECTIFIERS D a ta Sheet Description Mechanical Dimensions Note: Ring Markings on Cathode Features • INEXPENSIVE ■ SURFACE MOUNT CONFIGURATION ■ GLASS PASSIVATED DIE ■ AVALANCHE VOLTAGE 24 TO

746 KBU

Contextual Info: pci 3 0 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions « - .900 -►] T0-3P 4r ^200 f .050 Typ Features • HIGH CURREHT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS

Contextual Info: D ata Sheet 2.5 A n * MINIATURE PLASTIC SILICON RECTIFIERS miconductor Mechanical Dimensions Description 1 '23° t . 1.00 Min. . r . 3 o o 1 JEDEC DO-15 I s t .1041 .140 9 fic _L t ' -031 typ. Features • DIFFUSED JUNCTION ■ LOW COST M EETS UL SPECIFICATION 94V-0

Contextual Info: 550 mA HIGH VOLTAGE MICROWAVE OVEN RECTIFIERS Mechanical Dimelisions .285? 1 ,1.00 Mii^ - .866->| ^.050 _L t Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL lB < IpA ■ COHTROLLED AVALANCHE CHARACTERISTICS ■ HIGH TEMPERATURE SOLDERING 250°C 10 Seconds

Contextual Info: 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS Semiconductor E Features • FAST SWITCHING FOR HIGH EFFICIENCY ■ 1JO AMP OPERATION @ T . = 55°C, WITH NO THERMAL RUNAWAY ■ HIGH SURGE CAPABILITY ■ M EETS UL SPECIFICATION 94V-0 E le c t r ic a l C h a r a c te r is tic s @ 2 5 °C .

Contextual Info: Data Sheet 3.0 Amp BARRIER SCHOTTKY RECTIFIERS Semiconductor Features • LOW STORED CHARGE; MAJORITY CARRIER CONDUCTION ■ MEETS UL SPECIFICATION 94V-0 ■ EXTREMELY LOW VF ■ LOW POWER LO SS— HIGH EFFICIENCY Electrical C haracteristics 9 25°C. IN5820, 21 A 22 Series

Contextual Info: D atash eet 500 mW EPITAXIAL PLAN AR DIODES Semiconductor M echanical Dim ensions JEDEC DO-35 . t .0 6 0 1 .0 90 Ip 1 .1 2 0 , 1 .0 0 h D . , 1 1 t .0 24 typ. Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0

Contextual Info: 3.0 Am p M EG ARECTIFIERS Data Sheet Features • HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION ■ 3.0 AMP OPERATION @ T = 55°C, WITH NO THERMAL RUNAWAY ■ SINTERED GLASS CAVITY-FREE JUNCTION ■ TYPICAL !„ < 0.1 pAmp Electrical Characteristics @ 2S*C.

Contextual Info: 1.0 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Mechanical Dimensions Description Package 8 4.3/4.7 -*| ♦ Features • EXTREMELY LOW VF ■ M AJORITY CARRIER CONDUCTION ■ LOW STORAGED CHARGE ■ M EETS UL SPECIFICATION 94V-0 ■ LOW POWER LOSS - HIGH EFFICIENCY