KBJ10K Search Results

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: KBJ10A THRU SEMICONDUCTOR TECHNICAL DATA FORWAiUJ ttnERKATIONAL ELECIEONKS LID. KBJ10M T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE R A N G E 5 0 to 1000 Volts C U R R E N T - 10 A m p e re s

KBJ10A

Abstract: KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M
Contextual Info: KBJ10A – KBJ10M WTE POWER SEMICONDUCTORS 10A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards ! A G B C H















































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Contextual Info: KBJ10A – KBJ10M WTE POWER SEMICONDUCTORS 10A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability G High Reliability High Surge Current Capability ! Ideal for Printed Circuit Boards C UL Recognized File #E157705

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

Contextual Info: KBJ10A THRU KBJ10M O SINGLE PHASE 10.0 AMPS GLASS PASSIVATED BRIDGE RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Ampere GBJ 1.193 30.3 1.169(29.7) FEATURES HOLE FOR NO. 6 SCREW .150(3.80) .134(3.40) * Ideal for printed circuit board .799(20.3) .776(19.6)