KAY 3000 Search Results

marking s1

Abstract: 2N7002V 2N7002V-7 2N7002VA J-STD-020A
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: 2N7002V/VA Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

marking code va transistors

Abstract: Marking G2 marking code TC 2N7002V-7 2N7002VA J-STD-020A 2N7002V transistor marking G1
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: 2N7002V/VA Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

transistor marking code G1

Contextual Info: 2N7002V/VA ADVANCE INFORMATION DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

marking code VA

Abstract: kay 3000 S2 MARKING TRANSISTOR marking s1 2N7002V 2N7002V-7 2N7002VA MARKING SOT VA transistor marking code KAS transistor marking G1
Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA Pb DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

S2 MARKING TRANSISTOR

Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

transistor marking code G1

Abstract: MARKING CODE VA
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

diodes code va

Abstract: VA MARKING
Contextual Info: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

8v2 850

Contextual Info: BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

2N6770

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability

IN1733

Contextual Info: INTEX/ SEMITRONICS CORP j c m it r o n S e m it r o n ic s 57E I> SEMICONDUCTORS 'devices C o r p . y ; o ^ [ special package silicon rectifiers high voltage axial lead silicon cartridge rectifiers Peak Inverse Voltage volts (Note t) Max. RMS Input (volts)

1N2637

Contextual Info: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0 0 0 0 3 0 2 ñ I semitron hot line discrete devices t - oi-oi TOLL FREE NUMBER 800-777-3960 r - 3 3 - 2 3 special package silicon rectifiers conrd stud mounted fast recovery silico rfrè ctifie rs Maximum Average

hmtr

Abstract: YXA 50V
Contextual Info: TPHO^-rEIlT O # TRIODE-HEPTODE OBIUHE CBE^EHHfl GENERAL TpHoa-renToa c kopotkoh xapaKTepHCTHKOH, c pa3- aejibHMMH KaTo^aMH 6H4II npe,gHa3HaHeH ansi ncnojib30BaH H H a n 0 M e x 0 3 a m H m e H H 0 M aM irjiHTy,n.HOM ce jie ic T O p e H yCHJIHTeJie CHHXpOHMnyjIbCOB TejieBH3HOHHHX

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

MTOTO 80

Abstract: TU 38 06o3Ha-neHHe T04 56 ud 1803 IC C060P1 ERO MKC MTOT04
Contextual Info: M O ßyJlH Om OTHPHCTOPHblE H KOMEHHHPOBAHHblE 2 .2 . M o ^ y jiH C 0 6 0 P1 n p e ;i C T a B J ia f O T m om . M T O fl , o n T O T H p n c T o p H b ie K O M Ô H H aijH H T u p u c T o p o B AHO^a h TH pH CTopa K O M o m m p o B a m ib ie h o n T p o H H b ix

T2800G

Abstract: HT2800
Contextual Info: Benign Environment VRW-Fomily A C -D C Converters > 1 0 0 W VRW-Family 150/200/300/450 W AC-DC Converters Single output ♦ 3000 Vrms input to output electric strength test Safety according to IEC/EN 60950 LGA C€ n « i » Summary VRW 150 The VRW fam ily of switching power supplies is a single out­

Contextual Info: ÍS3 h a r r is U U CD22354A SEMICONDUCTOR Ç * 7 l A CMOS Single-Chip, Full-Feature PCM CODEC R anfctt9iI83 Features Description • Meets of Exceeds A l AT&T D3/D4 Specifications and CCfTT Recommendations The CD22354A and CD22357A are monolithic sillcongate, double-poly CMOS integrated circuits containing

82599EN

Abstract: 82599EN errata
Contextual Info: Intel 82599 10 GbE Controller Datasheet Networking Division ND PRODUCT FEATURES General                                  Dual port 10 GbE device or Single Port device (82599EN)

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

IN3599

Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0

82599EN

Contextual Info: Intel 82599 10 GbE Controller Datasheet Networking Division ND PRODUCT FEATURES General                                  Dual port 10 GbE device or Single Port device (82599EN)

10GBASE-BX

Abstract: Panasonic PGS Thermal testing motherboards using multi meter dk qb MACsec EC 1030 TX408 h1g3 PEC 814 IR TRansmitter and receiver wikipedia
Contextual Info: Intel 82599 10 GbE Controller Datasheet PRODUCT FEATURES General  Serial Flash Interface  4-wire SPI EEPROM Interface  Configurable LED operation for software or OEM customization of LED displays  Protected EEPROM space for private configuration