KA-BAND MMIC MIXER Search Results

EUDYNA

Abstract: ka-band mixer ED-4701 RO4003
Contextual Info: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO

EUDYNA

Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Contextual Info: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO

ka-band mixer

Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Contextual Info: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO

Ka-Band MMIC Mixer

Abstract: ka-band mixer ED-4701 FMM5116YE RO4003 FREQUENCY up-CONVERTER EUDYNA mmic
Contextual Info: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO

Contextual Info: HMC1048LC3B v03.0414 GaAs MMIC DOUBLE-BALANCED MIXER, 2 - 18 GHz Features Typical Application Mixer - Double-BALANCED - SMT The HMC1048LC3B is ideal for: Passive: No DC Bias Required • Ka-band Transponders High Input IP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

Ka-Band MMIC Mixer

Contextual Info: HMC1048LC3B v02.0213 GaAs MMIC DOUBLE-BALANCED MIXER, 2 - 18 GHz Features Typical Application Mixer - Double-BALANCED - SMT The HMC1048LC3B is ideal for: Passive: No DC Bias Required • Ka-band Transponders High Input IP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

Contextual Info: HMC1043LC3 v01.0312 GaAs MMIC FUNDAMENTAL MIXER, 29 - 32 GHz Features Typical Application Mixer - TriPLe-BALANCeD - SMT The HMC1043LC3 is ideal for: Passive: No DC Bias required • Ka-band Transponders High input iP3: 23 dBm • Point-to-Multi-Point radios & VSAT

Contextual Info: HMC1048LC3B v01.0113 GaAs MMIC DOUBLE-BALANCED MIXER, 2 - 18 GHz Features Typical Application Mixer - Double-bAlANCeD - SMT The HMC1048lC3b is ideal for: Passive: No DC bias required • Ka-band Transponders High input iP3: 23 dbm • Point-to-Multi-Point radios & VSAT

Contextual Info: HMC1043LC3 v02.0414 GaAs MMIC FUNDAMENTAL MIXER, 29 - 32 GHz Features Typical Application Mixer - TRIPLE-BALANCED - SMT The HMC1043LC3 is ideal for: Passive: No DC Bias Required • Ka-band Transponders High Input IP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

Contextual Info: HMC1048LC3B v04.0614 GaAs MMIC DOUBLE-BALANCED MIXER, 2 - 18 GHz Features Typical Application Mixer - Double-BALANCED - SMT The HMC1048LC3B is ideal for: Passive: No DC Bias Required • Ka-band Transponders High Input IP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

HMC1043L

Abstract: marking 535 RF 2H1043 Ka-Band MMIC Mixer 109996-1
Contextual Info: HMC1043LC3 v01.0312 GaAs MMIC FUNDAMENTAL MIXER, 29 - 32 GHz Features Typical Application Mixer - TRIPLE-BALANCED - SMT The HMC1043LC3 is ideal for: Passive: No DC Bias Required • Ka-band Transponders High Input IP3: 23 dBm • Point-to-Multi-Point Radios & VSAT

CGY2108GS

Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
Contextual Info: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services

DMK2307-000

Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
Contextual Info: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Contextual Info: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding

Contextual Info: HMC158 MICROWAVE CORPORATION GaAsMMIC SMT FREQUENCY DOUBLER 1.3-4.0 GHz INPUT FEBRUARY 1998 Features General Description CONVERSION LOSS: 15dB The HMC158 is a miniature frequency dou­ bler in a MMIC die. Suppression of undes­ ired fundamental and higher order harmon­

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Contextual Info: F *. HMC156C8 X ila MICROWAVE CORPORATION G a A sM M IC S M T FREQUENCY DOUBLER 0 .7 -2 .3 GHz INPUT F E B R U A R Y 1998 Features General Description C O NVER SIO N LOSS: 18dB The HMC156C8 is a miniature frequency doubler in a non-hermetic ceramic surface

VMMK-2303

Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Contextual Info: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and

Contextual Info: HMC157C8 MICROWAVE CORPORATION G a A s M M IC S M T FR E Q U E N C Y D O U B LE R 1 - 3 G H z IN P U T FEBRUARY 1998 Features General Description C O NVER SIO N LOSS: 1 5 d B Fo, 3Fo, 4Fo ISOLATION: > 35 dB 10 to 20 dBm Frequency Doublers INPUT DRIVE LEVEL:

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、