KA-BAND BARE Search Results

XP1072-BD

Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

ka-band transistor

Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band bare
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1026

Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band transistor
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

ka-band transistor

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

max cw 4004

Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1027

Abstract: P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD XP1027-BD-000V XP1027-BD-EV1 VG07
Contextual Info: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3

Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD March 2009 - Rev 07-Mar-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

DM6030HK

Abstract: XP1072-BD
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

BD 139 140

Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

P1025-BD

Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Contextual Info: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

AV02-0626EN

Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Contextual Info: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based

p1027

Abstract: P1027-BD 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1
Contextual Info: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1072-BD

Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: MAAP-015016-DIE Ka-Band 4 W Power Amplifier 32 - 38 GHz Rev. V1 Features •      Frequency Range: 32 to 38 GHz Small Signal Gain: 18 dB Saturated Power: 37 dBm Power Added Efficiency: 23% 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method

tl1431 bclp

Contextual Info: h m M TY L X 6 4 3 1 / L X 6 4 3 1 A / L X 6 4 3 1 B M I C R O E L E C T R O N I C S P r e c is io n P r o g r a m m a b l e R e f e r e n c e s P r o d u c t io n KEY D ESCRI PTI o N The LX6431 series precision adjustable three term inal shunt voltage regulators are

Ericsson bts installation guide

Abstract: ericsson BTS and antenna installation ericsson BTS GSM 1800 Nokia BTS ericsson bts Technical specification BTS Base Terminal alcatel indoor BTS of ericsson siemens 230 gas discharge tube TNC PROTECTIVE CAP BTS 6000 ericsson
Contextual Info: Lightning Protectors Edition 2008/2009 Excellence in Connectivity Solutions Introduction content Introduction page 6 Definitions and terms page 27 Quick selection page 37 Products page 53 Accessories page 129 Application notes page 143 General information

bare die schottky diode

Abstract: CDB7619-000
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction

CME7660-203

Abstract: metal detector service manual CDP7624-207
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction