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K6A5 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K6A5		Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	122.41KB	1

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TE Connectivity GA100K6A575I Thermistor: NTC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GA100K6A575I		1,210		55	1 - 10 - 100 $1.58 1000 $1.29 10000 $1.29	Buy Now
Newark	GA100K6A575I	Bulk			35	1 - 10 - 100 $3.48 1000 $2.19 10000 $1.67	Buy Now
Powell Electronics	GA100K6A575I		799		35	1 - 10 - 100 $2.00 1000 $1.84 10000 $1.84	Buy Now
Master Electronics	GA100K6A575I					1 - 10 - 100 $2.34 1000 $1.89 10000 $1.65	Buy Now
Toshiba America Electronic Components TK6A50D(STA4,Q,M) Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	TK6A50D(STA4,Q,M)				1	1 $1.48 10 $1.48 100 $0.66 1000 $0.53 10000 $0.47	Get Quote
Mouser Electronics	TK6A50D(STA4,Q,M)					1 $2.17 10 $1.05 100 $0.85 1000 $0.68 10000 $0.64	Get Quote
Newark	TK6A50D(STA4,Q,M)	Bulk			50	1 - 10 - 100 $0.93 1000 $0.74 10000 $0.71	Buy Now
EBV Elektronik	TK6A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panduit Corp UTPK6A5GR - Bulk (Alt: UTPK6A5GR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	UTPK6A5GR	Bulk		14 Weeks	10	1 - 10 $23.34 100 $22.98 1000 $22.86 10000 $22.86	Buy Now
Mouser Electronics	UTPK6A5GR					1 $30.10 10 $25.85 100 $24.50 1000 $23.99 10000 $23.99	Get Quote
Newark	UTPK6A5GR	Bulk			10	1 - 10 $32.90 100 $27.09 1000 $26.17 10000 $26.17	Buy Now
Sager	UTPK6A5GR				1	1 $35.29 10 $33.66 100 $27.01 1000 $27.01 10000 $27.01	Buy Now
Panduit Corp UTPK6A5MRD - Bulk (Alt: UTPK6A5MRD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	UTPK6A5MRD	Bulk		14 Weeks	10	1 - 10 $34.69 100 $34.15 1000 $33.98 10000 $33.98	Buy Now
Newark	UTPK6A5MRD	Bulk			10	1 - 10 $48.90 100 $40.25 1000 $38.89 10000 $38.89	Buy Now
Sager	UTPK6A5MRD				1	1 $50.05 10 $45.18 100 $40.16 1000 $39.67 10000 $39.67	Buy Now
TE Connectivity GA20K6A597I DISC-20K@25C+/-0.2 C 0 C-70 C - Bulk (Alt: GA20K6A597I)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GA20K6A597I	Bulk			1	1 $15.65 10 $15.65 100 $15.65 1000 $10.87 10000 $10.51	Buy Now
Mouser Electronics	GA20K6A597I					1 $23.50 10 $18.61 100 $14.93 1000 $14.07 10000 $14.07	Get Quote
Sager	GA20K6A597I				1	1 $15.65 10 $15.16 100 $13.66 1000 $12.93 10000 $12.93	Buy Now
Interstate Connecting Components	GA20K6A597I					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	GA20K6A597I					1 - 10 $16.72 100 $13.86 1000 $10.72 10000 $10.72	Buy Now

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K6A5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	tk6a53d k6a53d	PDF
Contextual Info: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	tk6a55da	PDF
K6A50D Abstract: K*A50D TK6A50D Contextual Info: K6A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : \|Yfs\| = 2.5 S (標準) 順方向伝達アドミタンスが高い。	Original	tk6a50d k6a50d k*a50d	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A53D ○ スイッチングレギュレータ用 : Vth = 2.4～4.4 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 2.54 記号定格単位ドレイン・ソース間電圧	Original	tk6a53d k6a53d	PDF
Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	tk6a53d	PDF
K6A55DA Abstract: TK6A55DA Contextual Info: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	tk6a55da k6a55da	PDF
K6A53D Abstract: TK6A53D Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	tk6a53d k6a53d	PDF
K6A55DA Contextual Info: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.25 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	tk6a55da k6a55da	PDF
K6A50D Abstract: TK6A50D Contextual Info: K6A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K6A50D スイッチングレギュレータ用単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2	Original	tk6a50d k6a50d	PDF
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	my110b z0206 z0208 z0210 +16z0211 z0212 z0214 z0215 z0217 z0219 hep 154 silicon diode zy 406 transistor motorola hep 801 hep 154 diode hep r1751 triac zd 607 2sb337 rs5743.3 f82z hep 230 pnp	PDF
TK6A50D Abstract: k6a50d K6A5 TK6A K6a50 Contextual Info: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk6a50d k6a50d k6a5 tk6a +1k6a50	PDF
K6A53D Abstract: K6A5 TK6A53D Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	tk6a53d k6a53d k6a5	PDF
K6A50D Abstract: TK6A TK6A50D K*A50D Contextual Info: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk6a50d k6a50d tk6a k*a50d	PDF
K6A55DA Abstract: VDD200 TK6A55DA Contextual Info: K6A55DA 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K6A55DA ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.2 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 550 V)	Original	tk6a55da k6a55da vdd200	PDF

Contextual Info: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk6a50d	PDF
K6A50D Contextual Info: K6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A50D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	tk6a50d k6a50d	PDF
K6A55DA Abstract: TK6A55DA K6A5 TK6A Contextual Info: K6A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	tk6a55da k6a55da k6a5 tk6a	PDF
Contextual Info: K6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)	Original	tk6a53d	PDF
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	tht404 zv15a zy33a zt696 +16zv15b zy33b zt697 zt706 zv27a zy62a triac zd 607 hep c6004 2sb504 2sc 968 npn transistor sje 607 motorola c6004 diode by127 specifications k872 af118 motorola semiconductor hep c3806p	PDF

K6A5 Search Results

K6A5 Datasheets (1)

K6A5 Price and Stock

TE Connectivity GA100K6A575I

Toshiba America Electronic Components TK6A50D(STA4,Q,M)

Panduit Corp UTPK6A5GR

Panduit Corp UTPK6A5MRD

TE Connectivity GA20K6A597I

K6A5 Datasheets Context Search

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hep 154 silicon diode

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triac zd 607