K4S510832 Search Results

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

RA12

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

K4S510832M

Abstract: RA12
Contextual Info: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM

k4s510832c

Abstract: K4S510832C-KL
Contextual Info: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

K4S510832D

Abstract: K4S510432D k4s511632d K4S511632D-UC
Contextual Info: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

K4S510832C

Abstract: K4S510832 K4S510832C-KL
Contextual Info: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as

K4S510832M

Abstract: RA12
Contextual Info: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

54-TSOP

Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004

M377S2953MT3

Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Contextual Info: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: PC133/PC100 SODIMM M464S6453DKS M464S6453DKS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6453DKS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

b1a12

Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
Contextual Info: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004

M464S6453BK0-L1H

Contextual Info: M464S6453BK0 PC100/PC133 512MB SODIMM Revision History Revision 0.0 Nov. 2000 Revision 0.1 (Jan. 2001) • Correted column address information in PIN CONFIGURATION DESCRIPTION. C ’ A11’is deleted • Defined the input capacitance in CAPACITANCE. • Redefined the ICC* in DC CHARACTERISTICS.

Samsung 16M SDRAM B-die

Abstract: K4S510432B-TC K4S511632B
Contextual Info: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

b1a12

Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0
Contextual Info: 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb D-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4S510

Abstract: M374S2953MTS M374S2953MTS-C1H M374S2953MTS-C75
Contextual Info: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous

Samsung M464S6453CKS-L7A

Abstract: m464s64* samsung M464S6453CKS K4S510832C
Contextual Info: M464S6453CKS PC133/PC100 SODIMM Revision History Revision 0.0 Sept. 2001 Revision 0.1 (Feb. 2002) - Typo in SPD 127byte corrected This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited

K4S511632B-UC75

Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC
Contextual Info: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004

M390S2953MT1

Abstract: M390S2953MT1-C75 PC133 registered reference design
Contextual Info: preliminary PC133 Registered DIMM M390S2953MT1 M390S2953MT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2953MT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2953MT1 consists of eighteen CMOS 64Mx8 bit

M366S2953MTS

Abstract: M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H
Contextual Info: Preliminary PC133/PC100 Unbuffered DIMM M366S2953MTS M366S2953MTS SDRAM DIMM 128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung