K4S5 Search Results

K4S511632D

Contextual Info: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

K4S56163LC

Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S561633C

Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S561633F

Abstract: K4S561633F-X
Contextual Info: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

K4S561632C-TC/L75

Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

K4S561632C

Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM

Contextual Info: K4S560832C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560832C CMOS SDRAM

Contextual Info: K4S560832C CMOS SDRAM 256Mbit SDRAM Super low power 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S560832C CMOS SDRAM Revision History

Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile SDRAM (TCSR & PASR option support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)

Contextual Info: K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560832C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001

K4S561633C-RLN

Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2001 Rev. 1.0 Feb. 2002 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

samsung capacitance year code

Contextual Info: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,

K4S563233

Abstract: K4S563233F
Contextual Info: K4S563233F - F H E/N/G/C/L/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

K4S511632C

Abstract: samsung cmos dram 4m x 4
Contextual Info: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations

K4S560432B

Abstract: RA12
Contextual Info: K4S560432B CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560432B CMOS SDRAM Revision 0.1 March 10, 2000

K4S513233F

Contextual Info: K4S513233F - M E C/L/F Mobile SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,

K4S561632N

Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
Contextual Info: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4S510632D-TC/L75

Abstract: RA12 K4S510632D 875mil CMOS SDRAM
Contextual Info: K4S510632D CMOS SDRAM Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Apr. 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM Revision History Revision 0.0 Apr., 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM 32M x 4Bit x 4 Banks Synchronous DRAM

K4S511632

Abstract: K4S511632M
Contextual Info: K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M CMOS SDRAM Revision History Revision 0.0 Mar. 2001

K4S56163LC

Contextual Info: K4S56163LC-R B F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)F/R CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

Contextual Info: CMOS SDRAM K4S56163LC-RL/N/P 16Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RL/N/P CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).

K4S561632C-TC75

Abstract: K4S561632C-TC1L
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001