K4Q160411C Search Results
K4Q160411C Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| K4Q160411C-B-50 |
|
4M x 4-Bit CMOS Quad Inverted CAS DRAM with Extended Data Out | Original | 405.77KB | 20 | ||
| K4Q160411C-BC50 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 405.77KB | 20 | ||
| K4Q160411C-BC60 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 405.77KB | 20 | ||
| K4Q160411C-BL50 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 405.77KB | 20 | ||
| K4Q160411C-BL60 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin | Original | 405.77KB | 20 | ||
| K4Q160411C-FC50 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin | Original | 405.77KB | 20 | ||
| K4Q160411C-FL60 |
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin | Original | 405.77KB | 20 |
K4Q160411C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
0411CContextual Info: K4Q170411C, K4Q160411C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle 2K Ref. or 4K Ref. , access |
Original |
K4Q170411C, K4Q160411C mod11C, 300mil 0411C | |
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Contextual Info: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C |
Original |
M53640400CW0/CB0 M53640410CW0/CB0 M53640410CW0/CB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin | |
64mb edo dram simm
Abstract: K4E160411C
|
Original |
M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C | |
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Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C |
Original |
M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0 | |
DQ9-DQ12Contextual Info: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C |
Original |
M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12 |