| K4Q170411C-B-50 |
|
Samsung Electronics
|
4M x 4-Bit CMOS Quad Inverted CAS DRAM with Extended Data Out |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-BC50 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-BC60 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-BL50 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-FC60 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-FL50 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
| K4Q170411C-FL60 |
|
Samsung Electronics
|
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP: 28-Pin |
Original |
PDF
|
405.77KB |
20 |
