K384 Search Results

k3846

Contextual Info: K3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3846 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)  High forward transfer admittance : |Yfs| = 33 S (typ.)

2SK3846

Abstract: K3846
Contextual Info: K3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)

2SK3847

Contextual Info: K3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOS III K3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 36 S (typ.)

k3843

Abstract: 2SK3843 TC4090 32V16
Contextual Info: K3843 シリコンNチャネルMOS形 U-MOSⅢ 東芝電界効果トランジスタ K3843 ○ スイッチングレギュレータ､DC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 120 S (標準)

Contextual Info: K384001/382001 SONY 524,288 /262,144-word X 8-bit CMOS Mask Programmable ROM Description K384001 / 382001 is a CMOS m askprogram mable ROM organized as 5 2 4 ,2 8 8 w o rds by 8 -b it C X K 3 8 4 0 0 1 and 2 6 2 ,1 4 4 w o rds by 8-bit (C X K 382001). The chip enable

k3844

Contextual Info: K3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ K3844 Switching Regulator, DC-DC Converter Applications Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.1 mW (typ.) · High forward transfer admittance: |Y fs| = 63 S (typ.)

Siecor 62.5

Abstract: SIECOR Fiber patch panel k514 C8831 Corning Infinicor 300 ofnp ZA-2385 ZA-1457 K5141 K3116 c9131
Contextual Info: Cable Assemblies OptiFit Node Assembly | Photo CAPSS1721 Corning Cable Systems FC Ultra PC 12-Fiber | Photo CCA30 Description As the industry’s leading supplier of single-mode cable assemblies, Corning Cable Systems offers the most complete line of connectors and factory-terminated cables.

2SK3845

Abstract: K3845
Contextual Info: K3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3845 Switching Regulator, DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.)

K3846

Abstract: 2SK3846
Contextual Info: K3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)

K3846

Abstract: 2SK3846 ID261
Contextual Info: K3846 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII K3846 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 33 S (標準)

2SK3847

Abstract: K3847 ID6-020
Contextual Info: K3847 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII K3847 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 36 S (標準)

2SK3845

Contextual Info: K3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3845 Switching Regulator, DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.)

Thyratron

Abstract: thyratron tube technical specifications thyratron tube general electric
Contextual Info: THYRATRON DESCRIPTIO N T h e F G -6 7 is a m e rc u ry - v a p o r th y r a t r o n w ith a n in te r m e d ia te c o n tro l c h a r a c te r is tic . T h is tu b e is p a r tic u la r ly d e s ig n e d fo r u se in in v e r te r c irc u its w h e re a s h o r t d e io n iz a tio n tim e is re q u ire d .

2SK3845

Contextual Info: K3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3845 Switching Regulator, DC-DC Converter Applications and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.)

Contextual Info: K3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3843 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.)

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

Contextual Info: K3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3843 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.)  High forward transfer admittance

l9938

Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:

k3842

Abstract: Regulate S2 2SK3842
Contextual Info: K3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.)

K3843

Abstract: 2SK3843
Contextual Info: K3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3843 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.)

k3843

Abstract: k3843 circuit 2sk3843
Contextual Info: K3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII K3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance : |Yfs| = 120 S (typ.)

K3842

Abstract: 2SK3842
Contextual Info: K3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.)

k3842

Abstract: 2SK3842 regulator 48V
Contextual Info: K3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.)