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    YAGEO Corporation AT0603BRD07100RL

    Thin Film Resistors - SMD 0603 100Ohms 0.1 % 25PPM 100mW AECQ200
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    TTI AT0603BRD07100RL Reel 15,000 5,000
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    Vishay Intertechnologies TNPW060327K4BEEA

    Thin Film Resistors - SMD 27.4Kohms .1% 25ppm
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    TTI TNPW060327K4BEEA Reel 10,000 5,000
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    Amphenol Corporation 88-565867-16S

    Circular MIL Spec Connector 16P ST PLUG SOC SZ 21
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    TTI 88-565867-16S Each 424 1
    • 1 $54.98
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    • 100 $43.19
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    Phoenix Contact 1464114

    Pluggable Terminal Blocks XPC 1,5/10-ST-3,5 BK
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    TTI 1464114 Bulk 50 50
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    Amphenol Corporation FH-678086-37P

    Circular MIL Spec Connector M801 37C 37#23 PIN PLUG OM
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    TTI FH-678086-37P 50 1
    • 1 $444.48
    • 10 $324.10
    • 100 $300.10
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    K3757 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2sk3757sc-672-10u1bk3757 PDF

    K3757

    Abstract: toshiba marking code transistor
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2sk3757k3757toshiba marking code transistor PDF

    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2sk3757k3757 PDF

    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2sk3757k3757 PDF

    K3757

    Abstract: 2SK3757 C-12180 mos 245
    Contextual Info: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2sk3757sc-672-10u1bk3757+2c-12180mos 245 PDF

    k3757

    Abstract: 2SK3757 A/equivalent 2sk3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2sk3757k3757a/equivalent 2sk3757 PDF