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    YAGEO Corporation AT0603BRD07100RL

    Thin Film Resistors - SMD 0603 100Ohms 0.1 % 25PPM 100mW AECQ200
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    TTI AT0603BRD07100RL Reel 20,000 5,000
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    YAGEO Corporation RC1206FR-0736RL

    Thick Film Resistors - SMD General Purpose Chip Resistor 1206, 36Ohms, 1%, 1/4W
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    TTI RC1206FR-0736RL Reel 20,000 5,000
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    Vishay Intertechnologies CRCW060319R6FKEA

    Thick Film Resistors - SMD 1/8 Watt 19.6ohms 1%
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    TTI CRCW060319R6FKEA Reel 15,000 5,000
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    Vishay Intertechnologies TNPW060327K4BEEA

    Thin Film Resistors - SMD 27.4Kohms .1% 25ppm
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    TTI TNPW060327K4BEEA Reel 10,000 5,000
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    Vishay Intertechnologies CRCW2010301KFKEF

    Thick Film Resistors - SMD 3/4watt 301Kohms 1%
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    TTI CRCW2010301KFKEF Reel 8,000 4,000
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    K3757 Datasheets Context Search

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    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2SK3757 SC-67 2-10U1B K3757 2SK3757 PDF

    K3757

    Abstract: toshiba marking code transistor
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3757 K3757 toshiba marking code transistor PDF

    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3757 K3757 2SK3757 PDF

    K3757

    Abstract: 2SK3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3757 K3757 2SK3757 PDF

    K3757

    Abstract: 2SK3757 C-12180 mos 245
    Contextual Info: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2SK3757 SC-67 2-10U1B K3757 2SK3757 C-12180 mos 245 PDF

    k3757

    Abstract: 2SK3757 A/equivalent 2sk3757
    Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3757 k3757 2SK3757 A/equivalent 2sk3757 PDF