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Vishay Intertechnologies CRCW060319R6FKEA Thick Film Resistors - SMD 1/10watt 19.6ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW060319R6FKEA	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Amphenol Corporation 88-565867-16S Circular MIL Spec Connector 16P ST PLUG SOC SZ 21
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	88-565867-16S	Each	533		1	1 $52.91 10 $40.20 100 $33.95 1000 $33.95 10000 $33.95	Buy Now
Ohmite Mfg Co B20J1R0E Wirewound Resistors - Through Hole 20watt 1ohm 5% Axial
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TTI	B20J1R0E	Bulk	75		25	1 - 10 - 100 $5.64 1000 $5.00 10000 $5.00	Buy Now

K3757 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3757 Abstract: 2SK3757 Contextual Info: K3757 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.0 S (標準)	Original	2SK3757 SC-67 2-10U1B K3757 2SK3757	PDF
K3757 Abstract: toshiba marking code transistor Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3757 K3757 toshiba marking code transistor	PDF
K3757 Abstract: 2SK3757 Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)	Original	2SK3757 K3757 2SK3757	PDF
K3757 Abstract: 2SK3757 Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)	Original	2SK3757 K3757 2SK3757	PDF
K3757 Abstract: 2SK3757 C-12180 mos 245 Contextual Info: K3757 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.0 S (標準)	Original	2SK3757 SC-67 2-10U1B K3757 2SK3757 C-12180 mos 245	PDF
k3757 Abstract: 2SK3757 A/equivalent 2sk3757 Contextual Info: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3757 k3757 2SK3757 A/equivalent 2sk3757	PDF