K3564 TRANSISTOR Search Results

K3564 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

K3564 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k3564 Abstract: transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 k3564 transistor K3564 2SK3564 MARKING toshiba 133 LC1M-US-DC24 k3564 transistor transistor K3564 5 a	PDF
transistor K3564 Abstract: K3564 K3564 toshiba Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 transistor K3564 K3564 K3564 toshiba	PDF
k3564 Abstract: transistor K3564 2SK3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564 transistor K3564 2SK3564	PDF
transistor K3564 Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3564 transistor K3564 K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564	PDF
k3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564	PDF
k3564 Abstract: transistor K3564 K356 2SK35 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.)	Original	2SK3564 k3564 transistor K3564 K356 2SK35	PDF
transistor K3564 Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3564 transistor K3564	PDF