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    K3563 TRANSISTOR Search Results

    K3563 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    K3563 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Contextual Info: TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356 PDF

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 Transistor K3563 2sk3563 transistor 625 PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356 PDF

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563 PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications PDF