Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K3563 APPLICATIONS Search Results

    K3563 APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PEF24628EV1X
    		Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF Buy
    143-4142-11H
    		Amphenol Communications Solutions Paladin RPO, DC, 4-Pair, 4 Column, APP PDF
    143-6262-11H
    		Amphenol Communications Solutions Paladin RPO, DC, 6-Pair, 6 Column, APP PDF
    144-411D-11H
    		Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 10 Column, 1.5mm Wipe, APP PDF
    144-411G-21H
    		Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 16 Column, 2.25mm Wipe, APP PDF

    K3563 APPLICATIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Contextual Info: TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356 PDF

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 Transistor K3563 2sk3563 transistor 625 PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356 PDF

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563 PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications PDF