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    K3561 DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-52RJ11SNNE-010
    		Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-010 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft PDF
    MP-52RJ11UNNE-015
    		Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-015 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft PDF
    MP-52RJ11SNNE-007
    		Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-007 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 7ft PDF
    MP-52RJ11UNNE-010
    		Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-010 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft PDF
    MP-52RJ11SNNE-015
    		Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft PDF

    K3561 DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3561k3561transistor k3561k3561 transistor+1k3561 transistor application PDF

    K3561

    Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
    Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2sk3561k3561transistor k3561k3561 transistor+4k356k3561 transistor applicationk3561 datatransistor 2sk3561 PDF

    K3561

    Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
    Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		2sk3561k3561transistor compatible k3561transistor k3561+5k3561 transistor2sk3561 equivalentk356k3561 silicon n channel mos typek3561 transistor application PDF