K13A50D 2.0 TRANSISTOR Search Results

K13A50D 2.0 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

K13A50D 2.0 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K13A50D transistor Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D	PDF
K13A50D transistor Abstract: k13a50 K13A50D TK13A50D K*A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D	PDF
Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D	PDF
K13A50D 2.0 transistor Abstract: K13A50D transistor K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D	PDF