K-952 TRANSISTOR Search Results

2N1156

Abstract: 2N1154 2N1155
Contextual Info: TYPES 2N1154, 2N1155, 2N1156 N-P-N GROWN-JUNCTION SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 8 2 2 6 9 , J A N U A R Y 1 9 6 2 -R E V IS E D M A Y 1968 FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY m echanical d a ta T h e t ra n s is to r is in a n o v a l w e ld e d p a c k a g e w ith g la s s -t o -m e t a l h e rm e tic s e a l b e t w e e n c a s e a n d le a d s.

Contextual Info: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.

Contextual Info: SIEM ENS BDP 952 PNP Silicon AF Power Transistor • For A F drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 952 BDP 952 Q62702-D1340 1 =B

bd950

Abstract: b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60
Contextual Info: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D m 711002b 0Cm310fl 3bb « P H I N 7 ^ 3 3 -/ ? SILICON EPITAXIAL B A SE POW ER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a w ide range o f power am plifiers and fo r switching applications.

N3BB

Abstract: D952
Contextual Info: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D • 711002b 004310Ô 3bb ■ P H I N T-33- n SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 9 5 1 ; 9 5 3 and 9 5 5 they are intended fo r use in a w ide range of power amplifiers and fo r switching applications.

Q62702-D1342

Abstract: D134 d1340 BDP951 BDP955 Q62702-D1340 Q62702-D1344
Contextual Info: BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Type Marking Ordering Code Pin Configuration

bd950

Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
Contextual Info: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

Contextual Info: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general

VPS05163

Contextual Info: BDP 952 . BDP 956 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BDP 952

Contextual Info: BDP 952 . BDP 956 PNP Silicon AF Power Transistors • For AF driver and output stages 4 • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP 951 . BDP 955 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package

Q62702-D1340

Abstract: p952
Contextual Info: SIEMENS BDP 952 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low coliector-emitter saturation voltage • Complementary type: BDP951.BDP955 NPN Marking Ordering Code Pin Configuration

Contextual Info: Philips Components D a ta sh eet status Product specification d a te o f issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

S95 SMD

Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Contextual Info: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

C3317

Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223

BD954

Contextual Info: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

BD951

Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

Contextual Info: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90

csa952

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

micrologic

Abstract: gating a signal using NAND gates fairchild micrologic IC953 slave and master inverter circuit diagrams Inverter Gates CA2TC CTVL952 pin configuration of logic gates logic gates circuit diagram
Contextual Info: • M ARCH 1965 CT mL952 THROUGH CTgL957 9 TRANSISTOR COMPLEMENTARY TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS MICROLOGIC® G E N E R A L D E S C R IP T IO N - The Fairchild CT/aL Fam ily was designed for very high-speed, low -cost com m ercial system s applications.

transistor csa952

Abstract: CSA952 CSC2001 MARKING W1 AD
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier.

transistor csa952

Abstract: CSA952 CSC2001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

BD951

Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N167A NPN GERMANIUM TRANSISTOR absolute .maximum ratings: (25°C) Voltage! Collector to Base Collector to Emitter Emitter to Base Vn Vm Vm Current