K 524 IR Search Results

Contextual Info: . TPS 524 / 534 |k Xvv:": • High Signal Voltage • Low Temperature Coefficient of Responsivity BISS ;•; .■ ; ! 11111 • Low Time Constant The sensor TPS 524 consists of a series of thermoelements forming a sensitive area ■B H I ■ Typical Reid of View

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

UPD42S4800-70

Contextual Info: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

MSM538002C

Abstract: SM535
Contextual Info: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V

KM48V514B

Contextual Info: CMOS DRAM KM4ÔV514B/BL/BLL 5 1 2 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 4 8 V 5 1 4 B /B I7 B L L is a C M O S h ig h sp e e d 524 ,28 8 x 8 D ynam ic R an d o m A c c e s s M em ory.

Contextual Info: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees

b32534

Contextual Info: B 32 524 MKT -1 I- - O rd e rin g c o d e s a n d p a c k in g u n its , le a d s p a c in g 2 7,5 m m Cr M a x im u m O rd e rin g c o d e 1 d im e n s io n s hy. f i x / m m ) ( Km , . f < 60 Hz) P a c k in g u n its (pcs) Ammo Reel

Contextual Info: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility

Contextual Info: O K I semiconductor MSC2330A-XXYS4/KS4_ 524 ,28 8 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e O ki M S C 2 3 3 0 A -x x Y S 4 /K S 4 is a fully decoded, 5 2 4 ,2 8 8 word x 8 bit C M O S dynam ic random access m emory com posed of four 1Mb D R A M s in SOJ M SM 514256A JS . T h e m ounting of four SOJs

Contextual Info: I • b 4 2 7 5 5 5 D O M l ^ 5 7 b M N E C E À T A NEC S H E E T MOS INTEGRATED CIRCUIT /¿PD42S4900, 424900 4 M BIT DYNAMIC RAM 512 K-WORD BY 9-BIT, FAST PAGE MODE DESCRIPTION ★ The /iPD42S4900, 424900 are 524 288 w ords by 9 bits dynam ic CMOS RAMs. The fast page m ode cap ab ility

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 500 S E R IE S , 300 V PH E N O LIC , 0.44" PITC H , H IG H T E M P E R A T U R E CHARACTERISTICS STRAP SCREW TUBULAR SCREW TUBULAR CLAMP QUICK CONNECT Type of B lock M odel M odel M odel D ir e c t M o u n t F la t B a s e

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

U 3870

Contextual Info: NOTES : O □050 PITCH 2. ll A i b b b b b b b b Ib b b b b b b b b i j j w H h l l n l H H H H I n l jl r d H H H H H I r i H H 1 3. 4. ^ CM ÉÉBBBBBBBHHBBBBBBBBB N CKT. IDENTIFICATION 00 A 6. 7. I CKT. IDENTIFICATION DRAWING i n 3.4±0.5 76.80 (. I34±.020) (3.024)

TMS44C256DJ

Abstract: tms44c256 TM256BBK32 NR-62
Contextual Info: TM256BBK32 262 144 BY 32-BIT DYNAMIC RAM MODULE TM512CBK32 524 288 BY 32-BIT DYNAMIC RAM MODULE SM M S232 - JANUARY 1991 This Data Sheet is Applicable to All TM256BBK32S and TM512CBK32s Symbolized with Revision “B" and Subsequent Revisions as Described on Page 6-30.

44c256

Abstract: TM256KBK36B J 262
Contextual Info: TM256KBK36B 262 144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36B 524 288 BY 36-BIT DYNAMIC RAM MODULE S M M S 236 — JANUARY 1991 TM256KBK36B . . . 262 144 Organization x Enhanced Page Mode Operation With CAS-Before-RAS, RAS-Only, and Hidden Refresh 36 TM512LBK36B . . . 524 288 x 36

TMS44C256DJ

Abstract: TMS44C260DJ TMS44C260 TMS44C256
Contextual Info: TM256KBK36C 262144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36C 524 288 BY 36-BIT DYNAMIC RAM MODULE SMMS237 — JANUARY 1991 TM256KBK36C . 262 144 x 36-Bit Organization Performance Ranges: TM512LBK36C . 524 288 x 36-Bit Organization T IM E TIM E W RITE *R A C

D7528

Contextual Info: ANALOG DEVICES FEATURES Low Noise: 0.3 jiV p-p 0.1 Hz to 10 Hz Low Nonlinearity: 0.003% (G = 1 High CMRR: 120 dB (G = 1000) Low Offset Voltage: 50 (jiV Low Offset V oltage Drift: 0.5 (jiV / 0C Gain Bandwidth Product: 25 MHz Pin Program m able Gains of 1, 10, 100, 1000

TMS27C512

Abstract: TMS27PC512 TMS27PC512 -12nt tms27c512-xxx
Contextual Info: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY J AND N PACKAGESt This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s TOP VIEW A 6[ 4 A 5[ 5 A 4[ 6 A 3[ 7 A 2[ 8 Max Access/Min Cycle Time