K 524 IR Search Results

Contextual Info: . TPS 524 / 534 |k Xvv:": • High Signal Voltage • Low Temperature Coefficient of Responsivity BISS ;•; .■ ; ! 11111 • Low Time Constant The sensor TPS 524 consists of a series of thermoelements forming a sensitive area ■B H I ■ Typical Reid of View

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

MSM538002C

Abstract: SM535
Contextual Info: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V

b32534

Contextual Info: B 32 524 MKT -1 I- - O rd e rin g c o d e s a n d p a c k in g u n its , le a d s p a c in g 2 7,5 m m Cr M a x im u m O rd e rin g c o d e 1 d im e n s io n s hy. f i x / m m ) ( Km , . f < 60 Hz) P a c k in g u n its (pcs) Ammo Reel

MSM538022C

Contextual Info: O K I Semiconductor MSM538022C 524,288-W ord x 16-B it o r 1,048,576-W ord x 8 -Bit M ask ROM DESCRIPTION The OKI MSM538022C is a high-speed CMOS M ask ROM th at can electrically sw itch betw een 524 288w o rd x 16-bit a n d 1,048 576-w ord x 8-bit configurations. The MSM538022C o perates o n T s in i 5 0 V

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

44-800-p

Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Contextual Info: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8

TMS44C256DJ

Abstract: tms44c256 TM256BBK32 NR-62
Contextual Info: TM256BBK32 262 144 BY 32-BIT DYNAMIC RAM MODULE TM512CBK32 524 288 BY 32-BIT DYNAMIC RAM MODULE SM M S232 - JANUARY 1991 This Data Sheet is Applicable to All TM256BBK32S and TM512CBK32s Symbolized with Revision “B" and Subsequent Revisions as Described on Page 6-30.

44c256

Abstract: TM256KBK36B J 262
Contextual Info: TM256KBK36B 262 144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36B 524 288 BY 36-BIT DYNAMIC RAM MODULE S M M S 236 — JANUARY 1991 TM256KBK36B . . . 262 144 Organization x Enhanced Page Mode Operation With CAS-Before-RAS, RAS-Only, and Hidden Refresh 36 TM512LBK36B . . . 524 288 x 36

TMS44C256DJ

Abstract: TMS44C260DJ TMS44C260 TMS44C256
Contextual Info: TM256KBK36C 262144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36C 524 288 BY 36-BIT DYNAMIC RAM MODULE SMMS237 — JANUARY 1991 TM256KBK36C . 262 144 x 36-Bit Organization Performance Ranges: TM512LBK36C . 524 288 x 36-Bit Organization T IM E TIM E W RITE *R A C

ms4480

Contextual Info: TMS44800, TMS44800L, TMS44800S 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS4BO — JULY 1991 • Organization . . . 524 288 x 8 D Z and D G C P ackages Top View • Single 5-V Power Supply (±10% Tolerance) 1 o DQ0 C 2 A C C E S S A C C E S S A C C E S S R E AD

31T1100

Abstract: 31t1100a 31T11 k 524 ir IBM31T1100A 31T110 IBM31T38JS
Contextual Info: IBM31T38JS IBM31T38JT Low Power Integrated Transceiver Features • IrDA 1.1, HP-SIR, Local Talk and Sharp ASK • Ultracompact package: * • • H 4.0 m m x D 4.8m m x L 9.6m m Low power consumption • 2m A @ 2 .7 V typical • 3m A @ 4 .2 V (typical)

Mifare antenna emission

Abstract: 5mm warm white LED 14000 mcd LED 18000 mcd 3mm white 13,56 MHz RFID antenna SPNovaLED-150 chip antenna rfid UHF Smart Core Z2 3.5 mm White LED Mifare protocol LED 18000 mcd
Contextual Info: Features: - Super high brightness surface mount LED. - High flux output. - C om pact package outline LxW of 6.0 x 6.0mm. - Ultra low height profile - 1 ,5mm. - Design for high current drive. - Qualified to JEDEC moisture sensitivity Level 2. - Com patible to IR reflow soldering.

27C510

Abstract: pc51020 SMJ27C510 pc510-20
Contextual Info: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS

Contextual Info: 4 DRAWING MADE THIS IN T H IR D DRAWING ANGLE P R O JEC TIO N I S UNPUBLISHED COPYRIG HT 19 RELEASED FOR PU BL IC A TI O N BY AMP INCORPORATED. ALL LOC ,1 9 IN T E R N A T IO N A L R IG H TS AF RESERVED. D IS T REVI SI ON S 50 ZONE LTR K D A 035 -ß- 265

Contextual Info: KODENSHI CORP • 524 aboa 2SE D 0000271 i ■ DIMENSIONS P G - IO Itix V H, m t n t 7 * h * - - y > h > * r a - ¥ i a ± l = £ # L f c i B * f f l < 7 )& # fK 7 * b t e > t T \ Unit; mm) to The PG-101 reflective sensor combines GaAs IRED and high-output power photodarlington in a miniature 3-terminal

Heimann

Abstract: TPS534 TPS524 thermistor 300k heimann tps
Contextual Info: TPS 524 / 534 • High Signal Voltage • Low Temperature Coefficient of Responsivity • Low Tim e Constant The sensor TPS 524 consists o f a series o f thermoelem ents forming a sensitive area Typicaí Reid of View o f 1.2 x 1.2 mm2 . The sensor is'herm eticaliy sealed into a housing, similar to TO 5,

diagram of ic 7941

Abstract: Teledyne Semiconductor
Contextual Info: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■

MP02X

Contextual Info: phase control th yris to rs modules A ir C o o le d T h y ris to r M o d u le s Part and Ordering Number ^D H M ^R R M W Urm @ T yj ^TYRMS ly * = VDM</100 V) (mA) T.= 75’C (Per Arm) (A) MP02X190-* MP03X190-* MP03X330-* MP03X360-* 800-1200 800-1200

IN5815

Abstract: IN5813 1N5812 IN5812 in5816 1N5816 IN5814 V100 4101II
Contextual Info: 1N5812 - 1N5816 S o lid State Devices Incorporated 14830 V a lle y V ie w Avenue La M irad a, C alifo rn ia 9 0 6 3 8 Telephone 213 9 21 -96 60 T W X 9 1 0 583-4807 20 AMP «NI» HIGH SP E E D RECTIFIER E pion is an exclusive S S D I ion im p la n ta tio n process