K 4145 TRANSISTOR Search Results

Contextual Info: SAMSUNG E L E C T R O N I C S MJD44H11 42E INC 7^4145 D 000=1013 T S S Î 1 G K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE POWER AND SWITCHINGSUCH AS OUTPUT OR DRIVER STAGES IN APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix

sc 4145

Abstract: ic sc 4145 k 4145 fzl 181 threshold switch Q67000-H8437 FZL4145D fzl 125
Contextual Info: FZL 4145 D Quad Driver Incl. Short-Circuit Signaling Bipolar IC Features ● ● ● Short-circuit shutdown with clock generator Four driver circuits for controlling power transistors Overload and short-circuit signaling P-DIP-18-1 Type Ordering Code Package

siemens fzl 125

Abstract: sc 4145 siemens lsl ic sc 4145 FZL+111
Contextual Info: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type Ordering Code Package

Contextual Info: SIEMENS Quad Driver Incl. Short-Circuit Signaling FZL 4145 D Bipolar IC Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code

Contextual Info: SAMSUNG S EM I C ON D UC T OR IN C BCW33 14E D j 0007207 | NPN EPITAXIAL SILICON TRANSISTOR T liL N tK A L 2 rU n rU o C - ^ - l‘ 1 r l A I N o l d 1U H SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Sym bol C h a ra cte ristic ; Collector-Base Voltage ' Collector-Emitter Voltage

Contextual Info: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation

Contextual Info: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b | NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: S A M S U N G SEMICONDUCTOR INC MPSA 06 IME D 7 ^ * 4 1 4 2 QDG73MS 3 | NPN EPITAXIAL SILICON TRANSISTOR ' ' T-29^21 AMPLIFIER TRANSISTOR • Collector-Hmltter Voltage: V c e o = 8 0 V • Collector Dissipation: Pc (max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -4 5 V Collector-Emitter Voltage V ceo -4 5 V Emitter-Base Voltage V ebo Collector Current

Contextual Info: KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT COLOR TV VERTICAL DEFLECFION OUTPUT ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO V ceo Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation

transistor B A O 331

Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
Contextual Info: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350

stk 490 070

Abstract: STK 290 010 200w audio amplifier circuit using stk IC STK 411 - 230 E STK 411 - 230 k stk 425 090 STK 4392 audio power amplifier STK 411 - 220 stk 490 110 STK 411 230 E
Contextual Info: • Features of the IM ST < g> Hybrid ICs |lE xce lle n t heat dissipation • One o f the most influential factors determining reliability o f electronic devices is "h eat“ . The IM ST substrate is most suitable for the field o f power electronics, dissipating heat

transistor kt 801

Abstract: S/transistor kt 801 KT 802 transistor a05 801
Contextual Info: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703

Contextual Info: S AM S UN G S E M I C O N D U C T O R . INC MMBT5089 IME D | Q0Q757T 5 £ NPN EPITAXIAL SILICON TRANSISTOR T - ¿ q . | q LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 — IM E D | T lb M lM S Ü007271. T § NPN EPITAXIAL SILICON TRANSISTOR - LOW NOISE TRANSISTOR T '- ^ . q - i q " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C

Contextual Info: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8598 IME D | 7^4142 DQim qO PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage

smv1p20

Contextual Info: e x 'S i licoriix SMV1P20 in c o r p o ra t e d P-Channel Enhancem ent Mode Transistor 4-PIN DIP Similar to TO-250 TO P VIEW PRODUCT SUMMARY 1 E V (B R )D S S r DS(ON) (V) (n) (A) -200 3.0 -0.40 2 E 1 GATE 2 SO U R CE 3 DRAIN ABSO LU TE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)1

Contextual Info: KA7577D ELECTRONICS Industrial HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor

Contextual Info: SAMSUNG ELECTRONICS INC MC4558C 42E D • 7^ b M m 2 DOD^mi D mSMGK LINEAR INTEGRATED CIRCUIT a sop DUAL OPERATION AMPLIFIER The MC4558 is a monolithic integrated circuit designed for dual operational amplifier. FEATURES • • • • « D IP No frequency compensation