K 409 Search Results

K3970

Contextual Info: Switching, N-Channel FETS Type Number Case Style T O - *BVDgo or BVgss Min Ciss Max (V) (PF) Vgs(off) Min (V) R(on) Idss Max Min Max (mA) Max (ohms) ID(off) T(on) Max (nS) Max (nA) J 109 K K 3970 K K 3971 K K 3972 ; K K 4091 K K 4092 KK4093 K K 4391 K K 4392

CY7C4241

Abstract: IDT722X1 CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4251 CY7C4421 IDT72421
Contextual Info: CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 425164 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 4251 64 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs Features • Functional Description

bk p36

Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -k 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free External memory can be expanded

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free External memory can be expanded

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free LQFP100-P-1414 *Lead-free External memory can be expanded

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free QFP100-P-1818B *Lead-free LQFP100-P-1414 *Lead-free

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free

BUZZER

Contextual Info: MN101E01J, MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01J MN101E01K MN101E01L MN101E01M 192 K 256 K 320 K 384 K 10 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free

IC 4027 pin diagram

Abstract: IC CD 4027 purpose of IC 4027 MK4027 MK4027-1 MK4027-3 ram 4027 4096X1-BIT IC 4027 501C
Contextual Info: K 4096x1-BIT DYNAMIC RAM M K 4 0 2 7 J/N -2 /3 F E A TU R E S □ Ind ustry standard 16-pin DIP (M K 4096) co n fig u ra tio n □ 120ns access tim e, 320ns cycle (M K 4027-1) 150ns access tim e , 320ns cycle (M K 40 27 -2) 200ns access tim e, 375ns cycle (M K 4027-3)

MN101E01K

Abstract: MN101E01L MN101E01M QFP100-P-1818B
Contextual Info: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K (under development) MN101E01L (under development) MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 24 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded

Contextual Info: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under planning) 256 K 320 K 384 K 10 K 14 K 24 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time

Contextual Info: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time

MN101E01K

Abstract: MN101E01L MN101E01M QFP100-P-1818B
Contextual Info: MN101E01K, MN101E01L, MN101E01M Type ROM x× 8-bit MN101E01K MN101E01L MN101E01M (under development) 256 K 320 K 384 K 10 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time

CY7C4255V

Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC
Contextual Info: CY7C4255V, CY7C4265V CY7C4275V, CY7C4285V 8 K/16 K/32 K/64 K x 18 Low Voltage Deep Sync FIFOs 32 K/64 K × 18 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3 V operation for low power consumption and easy integration into low voltage systems

Contextual Info: Difference Comparison table of TMP86CM25F/CS25F/PS25F/C925XB and TMP86CM25AF/FM25F ROM TMP86CM25F/ TMP86CS25F TMP86PS25F TMP86C925XB Emulation chip TMP86FM25F TMP86CM25AF 32 K (Mask ROM) 60 K (Mask ROM) 60 K (OTP) − 32 K (Flash) 32 K (Mask ROM) RAM 2K

mn101e16k

Contextual Info: MN101E16K, MN101E16L, MN101E16M Type ROM x× 8-bit MN101E16K MN101E16L (under planning) MN101E16M (under development) 256 K 320 K 384 K 12 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free (under development)

t24c02

Abstract: M08A NM24C02L NM24C04L
Contextual Info: NM24C02L/C04L/C08L/C16L National Semiconductor NM24C02L/C04L/C08L/C16L 2 K -/4 K -/8 K -/16K-Bit Serial EEPROM l2C Synchronous 2-Wire Bus General Description Features The NM24C02L/C04L/C08L/C16L devices are 2048/ 4096/8192/16,384 bits, respectively, of CMOS non-volatile

Contextual Info: MN101E16K, MN101E16L, MN101E16M Type ROM x× 8-bit MN101E16K MN101E16L (under planning) MN101E16M (under development) 256 K 320 K 384 K 12 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free (under development)

Contextual Info: CY7C4255V CY7C4275V CY7C4285V 8 K/32 K/64 K x 18 Low Voltage Deep Sync FIFOs 8 K/32 K/64 K × 18 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3 V operation for low power consumption and easy integration into low voltage systems ■ High speed, low power, first-in first-out FIFO memories

Contextual Info: 7809LP 16-Bit Latchup Protected Analog to Digital Converter R/C CS POWER DOWN Successive Approximation Register and Control Logic Clock CDAC 20 kΩ R1IN BUSY 10 kΩ R2IN 5 kΩ Comparator Serial Data Out Data Clock R3IN 20 kΩ Serial Data CAP Buffer 4 kΩ

10UF

Abstract: 1N4149 2N2369A 7809LP 7809LPRP ADS7809
Contextual Info: 7809LP 16-Bit Latchup Protected Analog to Digital Converter R/C CS POWER DOWN Successive Approximation Register and Control Logic Clock CDAC 20 kΩ R1IN BUSY 10 kΩ R2IN 5 kΩ Comparator Serial Data Out Data Clock R3IN 20 kΩ Serial Data CAP Buffer 4 kΩ

10UF

Abstract: 1N4149 2N2369A 7809LP 7809LPRP ADS7809 radiation-hardened, Diodes
Contextual Info: 7809LP 16-Bit Latchup Protected Analog to Digital Converter R/C CS POWER DOWN Successive Approximation Register and Control Logic Clock CDAC 20 kΩ R1IN BUSY 10 kΩ R2IN 5 kΩ Comparator R3IN Serial Data Out 20 kΩ Data Clock Serial Data CAP Buffer 4 kΩ

7809LPRP

Abstract: 10UF 1N4149 2N2369A 7809LP ADS7809
Contextual Info: 7809LP 16-Bit Latchup Protected Analog to Digital Converter R/C CS POWER DOWN Successive Approximation Register and Control Logic Clock CDAC 20 kΩ R1IN BUSY 10 kΩ R2IN 5 kΩ Comparator R3IN 20 kΩ Serial Data Out Data Clock Serial Data CAP Buffer 4 kΩ